MESO Structures with Functional Oxide Vias for Low-Energy Switching
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Solution Overview
Problem
Existing spintronic logic devices suffer from high energy and long switching times due to inefficiencies in converting charge to spin variables and vice versa, resulting in high Joule heat dissipation and slow signal propagation.
Innovation Solution
The development of magneto-electric spin orbital (MESO) structures with functional oxide vias, which utilize a more efficient spin-to-charge conversion mechanism, allowing for faster switching times and reduced energy consumption by using a spin-orbit coupling material stack and magnetoelectric dielectric materials to generate a charge current that switches magnetization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional spintronic logic devices are used, then non-volatile logic functionality is achieved, but switching energy is high and switching time is long
Solution Approach 1:
The patent changes the material parameters by introducing magnetoelectric dielectric materials (such as bismuth ferrite, chromium oxide, or magnesium oxide) with specific magnetic and electric properties. These materials enable coupling between electric fields and magnetization states, allowing for low-energy switching. The functional oxide vias are filled with these specialized materials to achieve efficient spin-to-charge conversion while maintaining non-volatile functionality.
Solution Approach 2:
The patent employs composite material structures combining ferromagnetic materials, non-ferromagnetic conductive materials, and magnetoelectric dielectric materials. The functional oxide vias contain magnetoelectric dielectric materials that bridge the ferromagnetic and conductive components, enabling efficient interaction between charge and spin degrees of freedom. This composite approach achieves both low switching energy and fast switching times.
2Speed
If spin-orbit coupling material stack is used, then switching time is reduced to 100 ps, but device structure becomes more complex
Solution Approach 1:
The patent divides the device into distinct functional segments: ferromagnetic material lines, non-ferromagnetic conductive lines, and functional oxide vias filled with magnetoelectric dielectric materials. Each segment performs a specific function, and the modular structure allows for systematic fabrication using standard semiconductor processes. The alternating pattern of ferromagnetic and conductive lines simplifies the overall device layout while enabling fast switching through localized spin-orbit coupling interactions.
3Loss of energy
If functional oxide vias with magnetoelectric dielectric materials are used, then energy consumption is reduced to 10 aJ, but manufacturing process becomes more difficult
Solution Approach 1:
The functional oxide vias serve multiple functions: they provide electrical connection, contain magnetoelectric dielectric materials for spin-to-charge conversion, and enable low-energy switching. The same via structure and filling process can be applied throughout the device, creating a universal solution that simplifies manufacturing. The magnetoelectric dielectric materials can be deposited using standard thin-film techniques, making the process compatible with existing semiconductor fabrication capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces switching energy to approximately 10 aJ and time to 100 ps, compared to 100 fJ and 10 ns for spintronic devices, enabling faster and more energy-efficient logic operations.
Implementation Method 1
utilize a more efficient spin-to-charge conversion mechanism, allowing for faster switching times and reduced energy consumption by using a spin-orbit coupling material stack
Implementation Method 2
magnetoelectric dielectric materials to generate a charge current that switches magnetization
Data Source
AI summary
Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.