Mesoporous Silica Protective Layer for Display Panel Signal Disturbance

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Solution Overview

Problem

Conventional TFT-LCDs face issues with signal disturbance and RC circuit delay due to the high relative dielectric constant of silicon nitride protective layers, which affects the performance and thickness of the devices.

Innovation Solution

A low dielectric constant protective layer made of mesoporous silica is introduced, replacing silicon nitride, with a relative dielectric constant of 1.4–2.4, which is formed using a 5-mask or 4-mask process, reducing signal disturbance and RC circuit delay while improving TFT device performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silicon nitride is used as the protective layer material, then the protective layer has good protective performance, but the relative dielectric constant is high causing large capacitance and signal disturbance

Engineering Contradiction:

Improveprotective performanceVSAvoidsignal disturbance

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the material parameter (relative dielectric constant) from silicon nitride (εr=7~8) to mesoporous silica (εr=1.4~2.4), thereby reducing capacitance and signal disturbance while maintaining protective function

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses mesoporous silica as a composite material with specific porous structure (hexagonal sub-components with through holes) to achieve both low dielectric constant and adequate mechanical protection

Inventive Principle:

Principle #40Composite materials

2Reliability

If silicon nitride is used as the protective layer, then the protective function is adequate, but the thickness cannot be reduced due to high dielectric constant

Engineering Contradiction:

Improveprotective functionVSAvoidlayer thickness

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

By changing the material from silicon nitride to mesoporous silica with lower dielectric constant, the protective layer thickness can be reduced while maintaining the same protective performance and electrical characteristics

Inventive Principle:

Principle #35Parameter changes

3Reliability

If high dielectric constant material is used, then the protective layer provides adequate protection, but RC circuit delay increases affecting TFT performance

Engineering Contradiction:

Improveprotective protectionVSAvoidRC circuit delay

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent reduces the dielectric constant parameter from 7~8 (silicon nitride) to 1.4~2.4 (mesoporous silica), which directly reduces capacitance and consequently reduces RC circuit delay, improving TFT response time and overall performance

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of mesoporous silica as a protective layer enhances TFT performance by reducing signal disturbance and RC circuit delay, allowing for thinner layers and improved image quality.

Implementation Method 1

A relative dielectric constant of the low dielectric constant protective layer is smaller than a relative dielectric constant of silicon nitride. The low dielectric constant protective layer includes the mesoporous silica. The relative dielectric constant of the mesoporous silica is εr=1.4～2.4.

Methodology Applied

Scientific EffectDielectric constant: Dielectric Permittivity

Data Source

PatentUS10304871B2Display panel and manufacturing method thereof

Publication Date: 2019.05.28 HKC CORP LTD

AI summary

A display panel and a manufacturing method are provided. The display panel includes a substrate, multiple active switches disposed on the substrate and a low dielectric constant protective layer. The low dielectric constant protective layer is formed on the numerous active switches. A relative dielectric constant of the low dielectric constant protective layer is smaller than a relative dielectric constant of silicon nitride.