Meta Optical Devices Using Nanorods for High-Resolution Imaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional image sensors with organic materials are not suitable for high-resolution applications due to their large size and thermal reliability issues, particularly when pixel sizes are 1 μm or less.
Innovation Solution
The development of meta optical devices featuring nanorods with specific cross-sectional widths and arrangements on a silicon semiconductor substrate, configured to sense light in different wavelength bands, and integrated with a readout circuit for high-resolution imaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional image sensor structures with organic materials are used, then the device can be manufactured with existing processes, but the device volume becomes large and thermal reliability deteriorates for high-resolution applications
Solution Approach 1:
The patent changes the material parameter from organic materials to silicon-based semiconductor materials, which fundamentally alters the thermal properties and enables high-resolution imaging with improved thermal reliability while reducing device volume
Solution Approach 2:
The patent employs composite nanorod structures with multiple semiconductor layers (first conductivity type, intrinsic, and second conductivity type) integrated on a silicon substrate, creating a composite material system that simultaneously achieves small size, high resolution, and thermal stability
2Measurement precision
If pixel size is reduced to 1 μm or less for high-resolution imaging, then the resolution is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent segments the image sensor into discrete nanorod units with different cross-sectional widths, where each nanorod functions as an independent pixel element. This segmentation enables high-resolution imaging through precise control of individual nanorod dimensions while simplifying the overall device architecture
Solution Approach 2:
The patent applies local quality by varying the cross-sectional width of individual nanorods according to their specific function (e.g., different widths for different wavelength bands), allowing each region to be optimized for its particular imaging requirement while maintaining overall device simplicity
3Adaptability or versatility
If nanorods with different cross-sectional widths are used to sense different wavelength bands, then the color sensing capability is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent systematically varies the cross-sectional width parameter of nanorods to create different optical responses for different wavelength bands. This parameter-based differentiation enables multi-color sensing capability while the widths can be controlled within feasible manufacturing tolerances (e.g., 50-200 nm ranges)
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These meta optical devices enable high-resolution imaging with improved thermal reliability and compact size, functioning as both light sensors and color filters, suitable for small pixel sizes.
Implementation Method 1
a meta optical device configured to sense incident light may include a substrate, and a plurality of nanorods on the substrate
Implementation Method 2
The plurality of first nanorods may be configured to condense and sense light in a red wavelength band based on a magnitude of the first width. The plurality of second nanorods may be configured to condense and sense light in a green wavelength band based on a magnitude of the second width
Data Source
AI summary
A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.


