Metal-Ceramic Substrate Bonding with Active Layer and HIP
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Solution Overview
Problem
Existing methods for producing metal-ceramic substrates face challenges in achieving a void-free, energy-efficient, and process-reliable connection between metal and ceramic layers, often resulting in solder residues and temperature requirements that are not optimal.
Innovation Solution
A method involving hot isostatic pressing with an active metal layer between the metal and ceramic elements, eliminating the need for solder base materials and reducing temperature requirements, while using pressure to minimize voids and ensure a strong bond.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If active soldering process is used to bond metal layer to ceramic element, then bonding strength is improved, but temperature requirements increase to 650-1000°C and solder residues remain
Solution Approach 1:
The patent changes the bonding temperature parameter from 650-1000°C in active soldering to below the melting point of the metal layer (typically 400-600°C), achieving strong bonding without excessive heat. This is accomplished by using hot isostatic pressing with active metal layer instead of traditional active soldering, allowing the bonding process to occur at reduced temperatures while maintaining bond strength.
Solution Approach 2:
The patent extracts and eliminates the solder base material from the bonding process. By using hot isostatic pressing with an active metal layer alone, the method removes the need for solder alloys, thereby eliminating solder residues while maintaining bonding strength through direct metallurgical bonding enhanced by the active metal layer.
2Reliability
If traditional bonding methods are used, then process simplicity is maintained, but voids and solder residues reduce bonding reliability
Solution Approach 1:
The patent introduces an active metal layer as an intermediary between the metal layer and ceramic element. This intermediate layer facilitates reliable bonding by creating strong chemical bonds with both the metal layer (through metallurgical bonding) and the ceramic element (through active metal-ceramic bonding), eliminating voids and solder residues while ensuring process-reliable bonding.
Solution Approach 2:
The patent employs a composite bonding structure consisting of the metal layer, active metal layer, and ceramic element. This composite approach combines the advantages of metallurgical bonding (strength) and active metal-ceramic bonding (reliability and void-free bonding), creating a multi-layer bonded structure that achieves superior bonding reliability.
3Reliability
If hot isostatic pressing is used without active metal layer, then process simplicity is maintained, but bonding success probability and void-free bonding are reduced
Solution Approach 1:
The active metal layer serves as a mediator that enhances the bonding success probability during hot isostatic pressing. It facilitates chemical reactions with the ceramic element while maintaining metallurgical bonding with the metal layer, ensuring void-free bonding and high bonding success probability without significantly increasing process complexity.
Solution Approach 2:
The patent applies local quality by placing the active metal layer specifically at the bonding interface between the metal layer and ceramic element. This localized application of active metal provides enhanced bonding capability exactly where needed, increasing bonding success probability without requiring active metal throughout the entire structure, thus minimizing added complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a void-free, high-quality bond with reduced solder residue and lower temperature requirements, enabling the production of metal-ceramic substrates with improved reliability and efficiency.
Implementation Method 1
This active metal, which is, for example, at least one element from the group consisting of Hf, Ti, Zr, Nb, and Ce, creates a bond between the solder and the ceramic through a chemical reaction
Implementation Method 2
forming the metal-ceramic substrate by bonding the metal layer to the ceramic element by means of hot isostatic pressing
Implementation Method 3
the use of pressure during hot isostatic pressing also proves advantageous because it reduces air inclusions between the metal layer and/or the additional metal layer on the one hand and the ceramic element on the other
Implementation Method 4
heating takes place, in particular sintering, during which the metal layer and/or the further metal layer of the metal container, in particular the later metal layer of the metal-ceramic substrate, does not enter the melting phase
Data Source
Figure 1a~1c
Figure 1d~1e
AI summary
The invention relates to a process for producing a metal-ceramic substrate (1), comprising: - providing a ceramic element (10) and a metal layer, - providing a gas-tight container (25) that encloses the ceramic element (10), the container (25) preferably being formed from the metal layer or comprising the metal layer, - forming the metal-ceramic substrate (1) by connecting the metal layer to the ceramic element (10) by means of hot isostatic pressing, wherein, for the purpose of forming the metal-ceramic substrate (1), an active metal layer (15) or a contact layer comprising an active metal is arranged at least in some sections between the metal layer and the ceramic element (10) for supporting the connection of the metal layer to the ceramic element (10).