Metal Dam Gate Separation in 3D Transistor Integration
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Solution Overview
Problem
The challenge lies in reliably forming three-dimensional transistors on a substrate in integrated circuit semiconductor devices, as the high integration of these devices makes it difficult to maintain the excellent performance demanded by consumers.
Innovation Solution
The integrated circuit semiconductor device incorporates a first and second region with active fins and gate electrodes, separated by metal dams, which are electrically connected to prevent damage and ensure precise arrangement, thereby suppressing the metal gate boundary effect and reliably configuring multi-bridge channel transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional transistors are formed in highly integrated circuits, then device integration density is improved, but manufacturing reliability deteriorates
Solution Approach 1:
The substrate is divided into first and second regions with different fin configurations. The first region has active fins with a first pitch while the second region has active fins with a second pitch, allowing different transistor characteristics in different areas of the integrated circuit.
Solution Approach 2:
Different regions of the substrate are given different local characteristics through varying fin pitches. The first region uses a first pitch suitable for its specific transistor requirements, while the second region uses a second pitch optimized for its different requirements, enabling localized optimization throughout the integrated circuit.
2Area of stationary object
If active fins are arranged closely to increase integration, then area utilization is improved, but threshold voltage control deteriorates
Solution Approach 1:
The substrate is segmented into regions with different fin pitches. By dividing the substrate into first and second regions, each region can maintain appropriate spacing between fins to control threshold voltage while still achieving high overall integration through the combined structure.
Solution Approach 2:
The fin pitch parameter is varied across different regions of the substrate. The first pitch and second pitch are different, allowing optimization of threshold voltage control in each region while maintaining high integration density across the entire device.
3Shape
If metal dams are used to separate gate electrodes, then physical separation is improved, but electrical connection reliability deteriorates
Solution Approach 1:
The metal dam serves as an intermediary structure that provides both physical separation and electrical connection. It is positioned between the first and second gate electrodes to prevent short circuits while maintaining electrical continuity through the gate structure.
Solution Approach 2:
The metal dam performs multiple functions simultaneously: it provides physical separation between gate electrodes to prevent short circuits, maintains structural integrity of the three-dimensional transistor, and ensures electrical connection continuity through the gate structure.
Data Source
AI summary
An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.