Metal Compound Film Patterning With Selective Solvent Development
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Solution Overview
Problem
Existing lithographic technologies face challenges in forming patterns smaller than the wavelength of light using EUV or electron beams due to the absorption characteristics of organic resists, leading to pattern collapse and poor etching resistance, especially when forming thin films.
Innovation Solution
A pattern forming method using a processing liquid with specific organic solvents (ClogP ≤ 0.7 and ΔH + ΔP ≥ 16) to selectively reduce unexposed portions of metal compound-containing films, particularly those containing polyoxometalates, ensuring suitable patterning and etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemically amplified organic resists are used in EUV lithography, then pattern formation is achieved, but etching resistance is insufficient and pattern collapse occurs
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by incorporating metal compounds (such as tungsten, molybdenum, or tungsten-bronze compounds) into the resist film. This compositional change enables the resist to maintain adequate etching resistance while keeping the film thickness within acceptable ranges, thereby preventing pattern collapse during etching processes.
Solution Approach 2:
The patent employs composite material structures by combining organic resist components with inorganic metal compounds. The metal compound-containing resist forms a composite film that integrates the patterning capabilities of organic resists with the etching resistance of inorganic materials, achieving both pattern formation and etching resistance simultaneously.
2Strength
If the resist film is thickened to improve etching resistance, then etching resistance increases, but pattern collapse risk increases due to high aspect ratio
Solution Approach 1:
The patent changes the material density and compositional parameters of the resist film by incorporating metal compounds. This allows the film to achieve sufficient etching resistance at reduced thickness levels, thereby lowering the aspect ratio and minimizing pattern collapse risk during subsequent etching operations.
3Ease of operation
If conventional organic solvents are used for processing metal compound-containing films, then processing is simple, but selective removal of unexposed portions is insufficient
Solution Approach 1:
The patent modifies the solvent parameters by selecting specific organic solvents with appropriate solubility characteristics for metal compound-containing resists. This enables selective dissolution of unexposed portions while maintaining processability, achieving both good pattern formation selectivity and operational feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables precise pattern formation on metal compound films with improved etching resistance and selectivity, suitable for use in semiconductor devices.
Implementation Method 1
a processing liquid containing an organic solvent, the organic solvent containing one or more first solvents, each of which satisfies (1) ClogP ≤ 0.7 and (2) ΔH + ΔP ≥ 16
Data Source
AI summary
A pattern forming method includes a step of exposing a metal compound-containing film and a step of processing the exposed metal compound-containing film using a processing liquid. The processing liquid contains an organic solvent. The organic solvent contains a first solvent for which ClogP ≤ 0.7 and ΔH + ΔP ≥ 16. The amount of the first solvent is 30% by mass or more relative to 100% by mass of the organic solvent.