Metal Gate Resistor Structure for FinFET and High-Voltage Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in integrating high voltage and FinFET devices due to issues such as current leakage and control of breakdown voltage as the scale of devices continues to decrease.
Innovation Solution
A method for fabricating semiconductor devices involves providing a substrate with defined regions for high voltage and low voltage devices, forming fin-shaped structures and base layers, and transforming gate structures into metal gates with a hard mask, along with the formation of interlayer dielectric layers and epitaxial layers to enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high voltage devices and FinFET devices are integrated on the same chip, then device functionality and power efficiency are improved, but current leakage and breakdown voltage control issues arise
Solution Approach 1:
The chip is divided into distinct high voltage device regions and FinFET device regions with separate fabrication processes. The high voltage devices use conventional planar structures while FinFET devices use three-dimensional structures, allowing each region to be optimized independently to prevent current leakage while maintaining integration benefits
Solution Approach 2:
Different gate structures are applied to different regions: conventional gates for high voltage devices and FinFET gates for low voltage devices. The gate materials, dimensions, and formation processes are locally optimized for each device type's specific electrical requirements, enabling reliable operation without cross-region interference
2Area of stationary object
If device scale is reduced to increase integration density, then chip area is reduced, but control of breakdown voltage becomes difficult
Solution Approach 1:
The fabrication process uses dynamic process control where implantation doses, annealing temperatures, and gate formation parameters are adjusted based on the specific region and device type. This allows breakdown voltage to be precisely controlled even as device dimensions are scaled down, maintaining manufacturing precision across different integration densities
Solution Approach 2:
The invention employs multiple implantation steps with varying doses and energies, along with controlled thermal processing, to independently adjust electrical parameters. By changing process parameters such as implantation dose, energy, and annealing temperature, breakdown voltage is precisely controlled despite reduced device dimensions
3Device complexity
If conventional fabrication processes are used for both high voltage and FinFET devices, then manufacturing complexity is reduced, but device performance and reliability deteriorate
Solution Approach 1:
The fabrication process is segmented into separate process modules for high voltage devices and FinFET devices. Each module uses optimized process parameters and techniques appropriate for that device type, allowing both to achieve high performance while sharing common process infrastructure such as oxidation, deposition, and lithography tools
Solution Approach 2:
The fabrication process uses universal process steps (such as thermal oxidation, chemical vapor deposition, and photolithography) that can be applied to both high voltage and FinFET devices, reducing overall manufacturing complexity. The same equipment and basic process techniques serve multiple device types, while region-specific parameters are adjusted to optimize each device's performance
Data Source
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AI summary
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a resistor region, forming a first gate structure on the resistor region, forming a first interlayer dielectric (ILD) layer around the first gate structure, transforming the first gate structure into a first metal gate having a gate electrode on the substrate and a hard mask on the gate electrode, and then forming a resistor on the first metal gate.