Metal Oxide Thin Film Transistors via Solution Processing
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Solution Overview
Problem
Existing thin film transistors face limitations in manufacturing high-performance devices due to the use of silicon and silicon oxide/nitrogen oxide, which result in high costs and complex processes, and there is a need for improved transistor characteristics.
Innovation Solution
A thin film transistor design utilizing a semiconductor channel with a first metal oxide and a gate insulating layer made of a second metal oxide, both including metals like zinc, indium, and tin, with varying concentrations of cerium, hafnium, and silicon, fabricated using a solution process to simplify the manufacturing process and improve performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If silicon and silicon oxide/nitrogen oxide are used for semiconductor channel and gate insulating layer, then manufacturing precision and reliability are improved, but manufacturing cost increases and device complexity increases
Solution Approach 1:
The patent changes the material parameters by replacing conventional silicon-based materials with metal oxide materials (such as zinc oxide, indium oxide, tin oxide, and their combinations). This parameter change allows achieving good transistor characteristics through solution processes at lower costs, resolving the contradiction between manufacturing precision and ease of manufacture
Solution Approach 2:
The patent employs inexpensive metal oxide materials that can be processed through simple solution methods rather than requiring expensive silicon-based materials and complex semiconductor fabrication processes. This substitution directly addresses the high manufacturing cost issue while maintaining acceptable device performance
2Reliability
If conventional materials (silicon, silicon oxide) are used, then transistor characteristics are stable, but manufacturing cost is high and process is complicated
Solution Approach 1:
The patent substitutes complex mechanical/chemical vapor deposition processes with simpler solution-based processing methods. Metal oxide materials are deposited through solution coating techniques followed by low-temperature annealing, replacing the complex multi-step semiconductor fabrication processes traditionally required
Solution Approach 2:
The patent uses composite metal oxide materials (such as IZO, ITO, ZTO, and their doped variants) that combine multiple metal oxides to achieve desirable electrical and insulating properties. These composite materials provide reliable transistor characteristics while enabling simpler processing compared to conventional silicon-based systems
Data Source
AI summary
Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.