Metal-Containing Resist Development With Selective Solvent Cleaning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional developing methods struggle to effectively remove residues of metal-containing resist films during the developing treatment, leading to pattern defects in semiconductor manufacturing due to incomplete dissolution of polymerized regions, which hinders mass production.
Innovation Solution
A developing method involving the use of a developing solution with an organic solvent followed by a cleaning solution of lower solubility for the metal-containing resist film, combined with ultraviolet irradiation and thermal treatment to enhance polymerization and harden the resist films, thereby reducing residue on the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a developing solution is used to dissolve metal-containing resist film, then the resist film can be developed, but residues remain on the substrate surface due to incomplete dissolution of polymerized regions
Solution Approach 1:
The developing process is divided into multiple sequential steps: first developing with a developing solution, then cleaning with a cleaning solution, and optionally repeating the cycle. This segmentation allows each solution to perform its specialized function - the developing solution dissolves exposed resist while the cleaning solution removes residues without affecting the developed pattern.
Solution Approach 2:
The invention changes the chemical parameters of the developing and cleaning solutions by using different organic solvents with different solubility characteristics for the metal-containing resist film. The cleaning solution has lower solubility for the polymerized resist regions, enabling selective residue removal while preserving the developed pattern structure.
2Strength
If ultraviolet irradiation and thermal treatment are applied to enhance polymerization, then resist film hardening is improved, but residue removal becomes more difficult
Solution Approach 1:
The process separates the functions of UV irradiation/thermal treatment (enhancing pattern definition and hardness) from residue removal (performed by the cleaning solution). This allows the resist to be sufficiently hardened for pattern stability while the cleaning solution specifically targets and removes polymerized residues that the developing solution cannot dissolve.
Solution Approach 2:
The cleaning solution acts as an intermediary that bridges the contradiction between hardened resist and residue removal. It has specific chemical properties that allow it to dissolve polymerized residues without attacking the hardened pattern structure, thus mediating between the need for strong polymerization and complete residue removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces the amount of resist residue on the substrate surface, ensuring precise pattern formation and enabling efficient semiconductor production by minimizing defects.
Implementation Method 1
supplying a developing solution containing an organic solvent to the substrate having a metal-containing coating film exposed into a predetermined pattern
Implementation Method 2
combined with ultraviolet irradiation and thermal treatment to enhance polymerization and harden the resist films
Implementation Method 3
combined with ultraviolet irradiation and thermal treatment to enhance polymerization and harden the resist films
Implementation Method 4
supplying a cleaning solution containing an organic solvent to the substrate supplied with the developing solution, wherein the cleaning solution is lower in solubility of the metal-containing coating film than the developing solution
Data Source
AI summary
A developing method of performing a developing treatment on a substrate includes supplying a developing solution containing an organic solvent to the substrate having a metal-containing coating film exposed into a predetermined pattern; and supplying a cleaning solution containing an organic solvent to the substrate supplied with the developing solution. The cleaning solution is lower in solubility of the metal-containing coating film than the developing solution.