Metal-Containing Resist Development in Weak-Acid Atmosphere
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to issues with pattern collapse due to residual developing or cleaning solutions in fine resist patterns, especially when using chemically amplified or metal-containing resists, which conventional developing methods fail to address effectively.
Innovation Solution
A substrate treatment method involving exposure to an acid atmosphere containing weak acid gas and mist, combined with heating, is used to develop a metal-containing resist film without conventional developing solutions, thereby forming the resist pattern without surface tension-induced collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developing solutions are used to develop metal-containing resist, then development is achieved, but pattern collapse occurs due to surface tension of residual solutions
Solution Approach 1:
The patent removes the harmful liquid developing solution from the system and replaces it with a gas-phase developing atmosphere. By extracting the liquid phase and using gas (acid atmosphere) for development, the surface tension issue that causes pattern collapse is eliminated, while still achieving effective resist development.
Solution Approach 2:
The patent substitutes the liquid-based developing mechanism with a gas-based chemical atmosphere. Instead of using liquid developing solution that creates surface tension problems, the system uses an acid atmosphere (gas phase) to achieve chemical development of the resist, replacing the mechanical/physical liquid development process.
2Manufacturing precision
If liquid developing solution is supplied to the substrate, then development is achieved, but contamination and residue remain in fine resist patterns
Solution Approach 1:
The patent extracts and removes the liquid developing solution from the fine resist pattern areas. By using gas-phase development, no liquid residue is left in the fine patterns, eliminating contamination sources while maintaining development effectiveness in high-resolution structures.
Solution Approach 2:
The gas atmosphere acts as an intermediary medium that enables chemical development without directly contacting the resist as a liquid. The acid atmosphere serves as a mediating chemical environment that facilitates resist dissolution without leaving harmful residues, unlike liquid solutions.
3Reliability
If acid atmosphere is used for development, then pattern collapse is prevented, but stronger acid may damage apparatus components
Solution Approach 1:
The patent changes the concentration parameter of the acid atmosphere to an optimal level. By controlling the acid concentration to be within a specific range (0.1-10% by volume), the system achieves effective resist development and pattern stability while preventing damage to apparatus components through moderate acid strength.
Solution Approach 2:
The acid atmosphere is applied locally and temporarily only during the development process. The acid concentration is controlled to be high enough for effective development but low enough to avoid permanent damage to apparatus. After development, the atmosphere is vented, leaving no residual acid on apparatus components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents pattern collapse and reduces contamination risks, maintaining pattern integrity and minimizing damage to apparatus components, while ensuring safe and controlled development conditions.
Implementation Method 1
exposing the substrate to an acid atmosphere being an atmosphere containing at least any one of gas and mist of a weak acid
Implementation Method 2
while heating the substrate
Data Source
AI summary
A substrate treatment method includes developing a substrate on which a coating film of a metal-containing resist has been formed and which has been subjected to exposure processing and a heat treatment after the exposure processing, wherein the developing includes exposing the substrate to an acid atmosphere being an atmosphere containing at least any one of gas and mist of a weak acid, while heating the substrate.