2D Material Contact Structure Using Metallic Interlayers for Low Resistance
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Solution Overview
Problem
The miniaturization of semiconductor devices is limited due to the short-channel effect and decreased charge mobility in three-dimensional bulk materials, and performance degradation occurs due to high contact resistance between two-dimensional (2D) materials and other components in transistors using 2D materials as channels.
Innovation Solution
A 2D material-based wiring conductive layer contact structure is introduced, featuring a semiconducting 2D material wiring and a metallic 2D material layer between the semiconducting 2D material wiring and a conductive layer, which reduces contact resistance by using materials like transition metal dichalcogenides or black phosphorene, and metallic 2D materials that exhibit metallicity, semi-metallicity, or superconductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If three-dimensional bulk materials are used for miniaturization, then device size can be reduced, but charge mobility rapidly decreases and short-channel effects occur
Solution Approach 1:
The patent transitions from three-dimensional bulk materials to two-dimensional materials, fundamentally changing the dimensional parameter of the channel structure. This parameter change enables continued miniaturization while maintaining high charge mobility, as 2D materials like TMDs and black phosphorene preserve excellent charge transport properties even at nanometer thicknesses, avoiding the mobility degradation inherent in scaled 3D materials
Solution Approach 2:
The patent explicitly employs dimensionality change by adopting two-dimensional materials for the transistor channel instead of conventional three-dimensional bulk materials. This dimensional transition allows the device to achieve smaller form factors while maintaining superior charge mobility characteristics, effectively resolving the contradiction between miniaturization and performance preservation
2Reliability
If two-dimensional materials are used as channel in transistors, then charge mobility is maintained and short-channel effect is reduced, but contact resistance between 2D material and other components increases
Solution Approach 1:
The patent introduces an intermediary layer at the contact interface between the 2D material channel and metal electrodes. This intermediate contact layer serves as a mediator that improves the electrical coupling between the 2D material and metal, reducing contact resistance while preserving the high charge mobility benefits of the 2D channel material
Solution Approach 2:
The patent employs composite material structures at the contact region, combining 2D materials with metal layers in a heterostructure configuration. This composite approach leverages the advantages of both materials: the high mobility of 2D materials and the excellent electrical conductivity of metals, while the engineered interface between them minimizes contact resistance
3Reliability
If contact resistance is reduced by using metallic 2D material layer, then signal transmission is improved, but device structure becomes more complex
Solution Approach 1:
The metallic 2D material layer performs multiple functions simultaneously: it serves as a contact layer to reduce contact resistance, acts as a conductive pathway for signal transmission, and can function as part of the gate electrode structure. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in device complexity while achieving improved signal transmission
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the operating characteristics of electronic devices by reducing contact resistance and heat generation, improving signal transmission and carrier mobility, thereby facilitating the miniaturization of semiconductor devices.
Implementation Method 1
a metallic 2D material layer between the semiconducting 2D material wiring and the conductive layer. The metallic 2D material layer may be in contact with the semiconducting 2D material wiring and the conductive layer
Data Source
AI summary
Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.