Integrated Metallization Interconnect for Low-Resistance Reliability

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Solution Overview

Problem

There is a need for integrated devices with reliable interconnects that provide low resistance and improved electrical conductivity, while minimizing the number of metal layers and fabrication steps to reduce costs and delamination risks.

Innovation Solution

The integrated device incorporates a metallization interconnect structure comprising an adhesion metal layer, a first metal layer, a second metal layer, and a third metal layer, which are coupled together to form a metallization interconnect that includes a combination of redistribution and under bump metallization interconnects, fabricated using fewer metal layers and steps than traditional processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional multi-layer metallization interconnects are used, then electrical conductivity is improved, but device complexity and fabrication cost increase

Engineering Contradiction:

Improveelectrical conductivityVSAvoidnumber of metal layers

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines redistribution metallization and under bump metallization into a single integrated metallization interconnect structure with four metal layers, eliminating the need for separate metallization structures and reducing overall device complexity while maintaining electrical conductivity

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integrated metallization interconnect performs multiple functions simultaneously: it provides redistribution of electrical signals and serves as under bump metallization for solder ball attachments, thereby reducing the number of required metal layers while maintaining electrical conductivity

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If more metal layers are added to reduce resistance, then electrical conductivity is improved, but fabrication cost and delamination risk increase

Engineering Contradiction:

Improveelectrical resistanceVSAvoidfabrication cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

By merging redistribution metallization and under bump metallization into a single integrated structure, the patent reduces the total number of metal layers required, thereby lowering fabrication cost and minimizing delamination risks associated with additional layers

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If traditional separate metallization structures are used, then electrical conductivity is achieved, but device complexity and fabrication steps increase

Engineering Contradiction:

Improveelectrical conductivityVSAvoidfabrication steps

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the formation of redistribution metallization and under bump metallization into a single fabrication process sequence, where both structures are created simultaneously using the same four metal layers deposited in sequence, thereby reducing fabrication steps

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integrated metallization interconnect serves dual purposes as both redistribution metallization and under bump metallization, allowing a single structure to fulfill multiple electrical and mechanical functions that traditionally required separate structures

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS12581937B2Integrated device comprising metallization interconnects

Publication Date: 2026.03.17 RF360 SINGAPORE PTE LTD

AI summary

An integrated device comprising a die substrate; a die interconnection portion coupled to the die substrate; and a metallization interconnect coupled to the die interconnection portion. The metallization interconnect comprises an adhesion metal layer, a first metal layer coupled to the adhesion metal layer; a second metal layer coupled to the first metal layer, and a third metal layer coupled to the second metal layer.