Metallization Mixtures for High-Deposition-Rate Interconnects
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Solution Overview
Problem
Current metallization processes for electronic devices, such as integrated circuits, lack significant improvements and face challenges in achieving high deposition rates and uniform electrical conductivity, especially for three-dimensional integrated circuits with complex interconnects.
Innovation Solution
A method involving the use of a mixture of metal particles and electroless deposition or electrochemical plating solutions to form a metal matrix, where the metal particles are embedded, enabling the formation of high-conductivity electrical conductors with varied compositions and crystalline structures, suitable for both two-dimensional and three-dimensional integrated circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wet chemical processes (electroless deposition or electrochemical plating) are used for copper metallization, then satisfactory electrical conductivity is achieved, but deposition rates are limited and manufacturing efficiency is reduced
Solution Approach 1:
The patent applies composite materials by combining metal particles (copper, aluminum, or alloy particles) with electroless deposition or electrochemical plating solutions. This creates a composite metallization layer that integrates the high conductivity of metal particles with the uniform coverage and adhesion properties of the deposited matrix, achieving both high deposition rates and satisfactory electrical conductivity simultaneously
Solution Approach 2:
The patent changes the parameters of the deposition process by introducing metal particles into the electroless deposition or electrochemical plating bath. This modification alters the deposition mechanism to include particle incorporation alongside conventional metal ion reduction, enabling faster deposition rates while maintaining the electrical conductivity required for interconnect applications
2Reliability
If conventional metallization processes are used for three-dimensional integrated circuits, then existing process compatibility is maintained, but uniform electrical conductivity and high deposition rates are difficult to achieve
Solution Approach 1:
The composite metallization approach using metal particles embedded in an electrolessly deposited or electrochemically plated matrix provides uniform distribution of conductive phases throughout the interconnect structure. This ensures consistent electrical conductivity across complex three-dimensional geometries while the accelerated deposition rate meets manufacturing productivity requirements
Solution Approach 2:
The metallization process is segmented into two complementary mechanisms: (1) electroless deposition or electrochemical plating that provides uniform coverage and adhesion to substrate and previous interconnect layers, and (2) metal particle incorporation that provides high conductivity pathways and accelerates deposition. This segmentation allows each mechanism to optimize its function while working together to solve the contradiction between uniformity and deposition rate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for higher deposition rates and improved electrical conductivity, offering a wider range of materials and uniformity in metallization, potentially exceeding the capabilities of standard technologies by achieving 10 times higher deposition rates and providing enhanced conductivity.
Implementation Method 1
electrolessly depositing a metal matrix
Implementation Method 2
electrochemically plating a metal matrix
Implementation Method 3
co-depositing the metal particles so the metal particles are embedded in the metal matrix
Data Source
AI summary
One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.