Micro LED Display Bonding with Light-Shielded Circuit Layout
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Solution Overview
Problem
The existing methods for manufacturing image display devices using micro LEDs are time-consuming and prone to connection defects, leading to low yield, especially as the number of micro LEDs increases for higher image quality, such as in full HD, 4K, or 8K displays.
Innovation Solution
A method involving a substrate with a semiconductor layer and a circuit board where a light-shielding layer is placed between the light-emitting element and the circuit element, allowing for wafer-level bonding and etching to form the light-emitting element, thereby shortening the transfer process and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individually-formed micro LEDs are sequentially transferred to a drive circuit substrate, then the display device can achieve high image quality (full HD, 4K, 8K), but the transfer process becomes extremely time-consuming and connection defects increase
Solution Approach 1:
The patent merges multiple micro LEDs into a single integrated semiconductor layer that is transferred as one unit to the drive circuit substrate. This eliminates the need for sequential individual transfer of each micro LED, dramatically reducing transfer time and the risk of connection defects while maintaining high image quality through the integrated structure.
Solution Approach 2:
The semiconductor layer containing multiple micro LEDs is formed and prepared on a first substrate before transfer to the drive circuit substrate. This preliminary formation allows the entire array of micro LEDs to be ready for simultaneous transfer, avoiding the time-consuming sequential process and enabling high-yield manufacturing of high-resolution displays.
2Manufacturing precision
If individually-formed micro LEDs are sequentially transferred to a drive circuit substrate, then the display device can achieve high image quality, but connection defects between micro LEDs and drive circuits increase and yield decreases
Solution Approach 1:
By combining multiple micro LEDs into a single semiconductor layer structure, the patent ensures uniform connection characteristics across all micro LEDs to the drive circuit substrate. The integrated transfer process eliminates variability in individual connection quality, reducing connection defects and improving overall yield while maintaining high image quality.
3Object-affected harmful factors
If a light-shielding layer is added to cover the circuit element, then light interference with the circuit is prevented, but the device structure becomes more complex
Solution Approach 1:
The light-shielding layer is integrated into the existing multi-layer structure of the display device, serving both as a protective shield against light interference with the circuit and as part of the overall device architecture. This multi-functional integration prevents light interference while minimizing additional structural complexity by incorporating the light-shielding function into the existing layer system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the transfer process time and increases yield by enabling uniform connection structures and alignment-free bonding, enhancing the manufacturing efficiency and luminous efficiency of the image display devices.
Implementation Method 1
a process of bonding the semiconductor layer to the second substrate on which the insulating film is formed
Implementation Method 2
The light-shielding layer is located between the light-emitting element and the circuit element. The light-shielding layer is provided to cover the circuit element when viewed in plan.
Implementation Method 3
a process of forming a light-emitting element by etching the semiconductor layer
Data Source
AI summary
A method for manufacturing an image display device includes: providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer; providing a second substrate comprising a circuit, wherein the circuit comprises a circuit element; forming a light-shielding layer on the second substrate; forming an insulating film on the light-shielding layer; bonding the semiconductor layer to the second substrate on which the insulating film is formed; forming a light-emitting element by etching the semiconductor layer; forming an insulating layer that covers the light-emitting element; and electrically connecting the light-emitting element to the circuit element. The light-shielding layer is located between the light-emitting element and the circuit element. In a plan view, the light-shielding layer covers the circuit element.