Micro LED Recessed Semiconductor Transfer via Adhesive Protrusion

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Solution Overview

Problem

Micro light-emitting diodes (mLEDs) face challenges in mass production due to inefficiencies in transfer processes, which hinder their adoption as next-generation display light sources compared to LCDs and OLEDs.

Innovation Solution

A light-emitting diode design featuring an epitaxial laminate with a recessed semiconductor layer and a connecting unit allows for effective transfer by a transfer member, utilizing a sacrificial layer and adhesive protrusion to separate the diode from a support member, enhancing transfer efficiency and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional transfer methods are used for mLEDs, then the transfer process is simple, but the transfer efficiency is low

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidtransfer process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The recess is formed in the first type semiconductor layer before the transfer process begins. This preliminary structural preparation enables the adhesive protrusion to be inserted and securely adhere to the mLED, facilitating efficient transfer while maintaining a relatively simple overall process flow.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The adhesive protrusion acts as an intermediary element that bridges the transfer member and the mLED. By inserting the adhesive protrusion into the recess, a reliable connection is established that enables high-efficiency transfer without requiring complex transfer mechanisms.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If no recess is provided in the semiconductor layer, then the structure is simple, but the adhesive protrusion cannot be inserted to permit reliable transfer

Engineering Contradiction:
Improvetransfer reliabilityVSAvoidsemiconductor layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The semiconductor layer is segmented by forming a recess that divides the surface into distinct regions. This segmentation creates a dedicated insertion space for the adhesive protrusion, ensuring reliable transfer while maintaining the overall integrity and simplicity of the semiconductor layer structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The recess introduces a localized structural feature at a specific position on the semiconductor layer surface. This local modification provides the necessary insertion point for the adhesive protrusion without altering the overall structure or material properties of the entire semiconductor layer, thus maintaining simplicity while enabling reliable transfer.

Inventive Principle:
Principle #3Local quality

3Ease of operation

If the light-emitting diode is directly bonded to the support member, then the structure is compact, but the transfer process becomes difficult

Engineering Contradiction:
Improvetransfer easeVSAvoiddevice structure
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The adhesive protrusion is extracted as a separate, insertable element rather than being integrated into the support member. This extraction allows the adhesive protrusion to be inserted into the recess of the semiconductor layer, enabling easy transfer operation while keeping the support member structure simple and compact.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The transfer process is made dynamic and reversible through the insertable adhesive protrusion. The protrusion can be inserted into the recess for transfer and removed when no longer needed, providing operational flexibility without requiring complex bonding or permanent attachment mechanisms.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11456400B2Light-emitting diode and method for transferring the same
Publication Date: 2022.09.27 HUBEI SANAN OPTOELECTRONICS CO LTD
  • US11456400B2 patent drawing
  • US11456400B2 patent drawing
  • US11456400B2 patent drawing

AI summary

Disclosed is a light-emitting diode including an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The first type semiconductor layer has an outer surface, and a recess extending inwardly from the outer surface. Also disclosed is a method for transferring the light-emitting diode.