Solid-State Devices TRIZ Cases

A 3D non-volatile memory device uses adjustment parts and outer electrodes to maintain uniform insulation thickness across vertical bit lines.

Varying fluorine content in lift-off and barrier layers creates undercut profiles that prevent impurity diffusion during electrode deposition.

Segmenting OLED electrodes into electrically isolated subregions with fuse elements prevents short circuit propagation and maintains luminous surface area.

Spacer-based manufacturing defines precise contact areas to reduce operational current and improve integration density.

Bulge and groove structures on a polyimide substrate disrupt waveguide effects to improve light extraction efficiency in organic light emitting diodes.

A GeTe and Sb2Te3 superlattice structure achieves high resistance states, reducing write current and preventing adjacent cell interference.

Segmented molding units isolate red phosphors from wavelength-converted light, preventing absorption losses and improving white luminous efficiency.

A groove in the first signal line reduces thickness at crossing regions to increase separation distance between intersecting conductors.

A dividing apparatus uses a segmented holder and presser to break workpieces along projected dicing lines.

A back-film structure with a first portion that gradually increases in thickness in the rolling direction to form an arc surface.

A display panel partition features a groove on its organic layer upper surface to manage step differences between areas.

Inorganic film segmentation blocks transverse carrier transfer in OLED pixel structures.

A hybrid connecting layer uses distinct host materials to balance carrier transport across OLED functional interfaces.

Trench structures and partition walls distribute bending stress to prevent peeling while increasing lateral resistance to reduce pixel crosstalk.

A nonvolatile memory device stores partial word line addresses in a latch to perform selective erase verification on critical memory cells.

Dispersed particles in the sealant scatter edge light, reducing dark areas and improving illumination uniformity.

Engaging sinusoidally modulated contours aligns imaging system components within optical tolerances, eliminating rotational misalignment errors.

A display array substrate routes touch signals through a dedicated metal layer connected to the light shielding structure.

Parallel transparent conductive films reduce voltage drop across the cathode, resolving brightness non-uniformity in AMOLED displays.

A gas-barrier insulating film blocks volatile byproducts from photosensitive resin layers in display substrates.

Liquid deposition of lower-k and higher-k dielectric materials creates a phase-separated structure for thin film transistors.

A bonding tool trench accommodates expanded release tape to prevent folded lines on underfill material.

Electromagnetic collection head captures magnetically polarized microcomponents suspended in fluid, resolving mechanical damage risks during assembly.

A halftone mask method forms a photoresist layer with specific thickness profiles to pattern thin film transistor data lines and source/drain structures.

Vertical mold structures define notch positions for stable domain wall control, resolving integration density limits in racetrack memory.

Vertical conductive pillars stack variable resistance layers between patterns, reducing process complexity while maintaining stable electrical conductivity.

Segmenting light emitting diodes by color enables magnetic positioning that resolves the trade-off between display versatility and manufacturing precision.

Shared diffusion material and perimeter contact rings enable parasitic bipolar snapback for MOSFET output driver electrostatic discharge protection.

A display device integrates overlapping bypass line and disconnection modules around a camera hole to maximize the effective light-emitting area.

Ion injection into pixel defining layers creates a barrier that prevents outgassing and extends device lifetime.

First adhesive layer encapsulates epitaxial structures to prevent thermal stress-induced shifts and maintain alignment precision.

Alternating oxidizing and reducing atmospheres during solder reflow prevents void explosions that scatter particles and cause wiring shorts.

A mask plate uses a redundant pattern to form a photoresist barrier that maintains concentration balance across regions.

Dummy gate electrodes and interlayer dielectric patterns form a lattice structure that prevents shape deformation of diode contact holes during manufacturing.

Hollow zones in independent display areas reduce non-display zone area while bending-resistant portions maintain structural integrity during folding.

Serial abrupt MIT structures bypass super-high voltage noise above 800kV, preventing insulator destruction where ceramic varistors fail.

Localized impurity zones in the photodiode suppress surface depletion and edge breakdown, reducing dark current while maintaining pixel separability.

A polarizing film with acutely inclined edges distributes attachment pressure to protect underlying circuit elements from damage.

A pixel structure uses a surrounding second electrode to divide domains and form a shared capacitor for higher aperture ratio.

A boundary layer absorbs thermal energy from laser irradiation to prevent damage to the resonance assistance and hole transport layers in OLED displays.

Cured adhesive spacers hold optical components in precise alignment during bonding, preventing positional shifts and ensuring uniform adhesive thickness.

Merging transparent electrode patterning with copper deposition cuts mask processes from seven to four, lowering manufacturing costs.

Corner recesses on display substrates position the sealant to maintain uniform distance from scribe lines, preventing micro-cracks during manufacturing.

A trench-isolated capacitive micromachined ultrasonic transducer array uses a conductive mesh frame for mechanical support.

Recess sidewall reflective guides direct light to photo diodes, reducing cross-talk and improving quantum efficiency in backside illuminated sensors.

An organic light emitting display device uses an encapsulation substrate with varying thickness to protect the diode layer.

A recessed semiconductor layer accepts an adhesive protrusion to secure a micro light-emitting diode, resolving low transfer efficiency in mass production.

Diodes and a ground resistor in the matrix suppress leakage current, improving energy resolution and linearity for radiation imaging accuracy.

A selection gate layer uses region-specific threshold voltages to manage potential transmission delays in stacked memory structures.

A semiconductor package integrates a lateral heat dissipation plate to resolve heat accumulation issues caused by stacking multiple chips.

Segmented via holes and grooves distribute bending stress across flexible substrates, reducing trace breakage risk in narrow frame OLED displays.

Opposing voltage-driven actuator layers rigidify the display rear surface during touch, suppressing deformation and ensuring precise coordinate detection.

Replacing oxide masks with carbon layers preserves nitrided oxide thickness, preventing device shifts in FINFET manufacturing.

Differential thermal expansion between the base and transfer heads compensates for structural growth during heating, preserving micro LED alignment accuracy.

Chemical plating deposits a nickel and silver metal layer on the OLED encapsulation to block moisture and oxygen permeation.

Inverted pyramids on semiconductor substrates redirect incident light to reduce reflection losses and improve quantum efficiency in low-light conditions.

A light-shielding layer transmits subpixel light through a substrate to specific ranges.

Removing inter-row ribs eliminates non-uniform magnetic forces that cause lifting, ensuring uniform material deposition on large substrates.

Transfer printing organic light emitting diode layers onto convex substrate protrusions eliminates vacuum evaporation equipment complexity.

Integrated sunshade plate suppresses stray light and reduces manufacturing complexity by merging baffle structure into wafer stack.

Hybrid emission layer combines phosphorescent and fluorescent dopants with acceptor substituents to minimize energy loss and improve luminous efficiency.

A logic-embedded diode conducts charge to a floating gate, preserving data states during power cycles.

Green light excites quantum dots for red and blue emission, reducing photon energy to protect organic materials from decay.

Integrating the light source into the image sensor die eliminates separate components, resolving complexity in optical fingerprint sensor packaging.

A nano-electron fluidic logic device steers surface plasma waves through a two-dimensional electron gas guiding structure.

Removing the LED substrate enables direct heat dissipation and eliminates phosphor thickness non-uniformity that degrades color quality.

Direct etching of a dielectric layer creates narrow tall isolation structures, avoiding voids from deep trench filling to reduce crosstalk and junction leakage.

A layer transfer method bonds a device layer onto a non-semiconductor glass support structure with a lower dielectric constant than silicon.

Merging two pass transistors into one active region reduces chip area occupation and minimizes interference between block word lines.

An organic thin film transistor uses an L-shaped semiconductor layer to reduce pixel area and increase capacitance.

Floating diode strings in forward conduction prevent signal clipping in analog circuits while minimizing chip area compared to conventional clamps.

A bypass transistor redirects minimum driving current to enhance black luminance expression in organic light emitting diode displays.

A positive-logic FET switch stack eliminates negative bias voltages using end-cap transistors and series resistor ladders.

Varying electrode width guides light emitting elements to specific locations, reducing manufacturing losses and improving display brightness.

Multi-tone mask patterning forms varying thickness photoresist regions to simultaneously etch array substrate components.

An array substrate integrates a capacitor structure within conductive layers to direct static electricity away from terminals.

Segmented organic photoelectric conversion layers resolve spectral data to eliminate bulky prisms and reduce device weight.

Adjusting programming voltage magnitude per cell diameter in 3D NAND strings narrows program threshold voltage distribution and reduces write time variability.

A resistance layer on an LED controls the active area to adjust current intensity and maintain external quantum efficiency.

A pixel structure uses two storage capacitors formed by overlapping electrode patterns to increase capacitance without reducing aperture ratio.

High-resistivity layers between vertically stacked HBT and FET components prevent dopant diffusion, enabling effective isolation for advanced PHEMT integration.

Micro auxetic lattices in the interposer compensate for thermal expansion mismatches, reducing mechanical stress on sensitive MEMS components.

A light focusing pattern layer controls incident angles to improve optical concentration in image sensors.

A polycyclic compound with a pyridine core serves as a thermally activated delayed fluorescence material in organic electroluminescence devices.

A radiation detector uses nanoparticles with higher bandgap energy to transfer charge directly within an organic semiconductor layer.

A white organic electroluminescent element uses a hydrocarbon hole-blocking layer to localize recombination regions.

Segmenting ground lines across stacking blocks reduces body effect and manufacturing costs without altering bit line characteristics.

A bulb-type trench isolates a buried bit line from a surrounding gate, preventing electric shorts during damascene word line etching.

A hole injection layer incorporates an electron transport compound to adjust carrier mobility ratios within organic light-emitting devices.

Segmented charge trapping patterns prevent vertical charge movement between gate electrodes, improving retention characteristics and data storage reliability.

Phosphor layers in planarization substrates convert harmful short-wavelength blue light into safe long-wavelength visible blue light.

A primer composition cures at low temperatures to form a robust coating that enhances bonding between epoxy resin molding compounds and semiconductor devices.

Perimeter adhesive segmentation prevents die delamination during extended storage and removal.

Conductive primary spacers link touch electrodes to signal traces across substrates, reducing metal shielding effects and improving light transmittance.

Metal atom diffusion dopes a first metal oxide layer in a bipolar RRAM selector, suppressing crosstalk and improving reliability.

Segmented emissive layers form a microcavity that boosts light transmittance, enabling rear-mounted sensors for true full-screen designs.

A thin film transistor gate insulator filters light to produce specific colors without additional color filter arrays.

Segmenting light sources by color eliminates differential aging in blue sub-pixels while removing microcavities to maintain wide viewing angles.