Nano-electron Fluidic Logic Device Plasmon Steering

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Solution Overview

Problem

Conventional CMOS digital circuits face limitations such as increased power consumption, leakage currents, short channel effects, and decreased channel mobility due to scaling, which hinder further speed improvements and increase manufacturing complexity.

Innovation Solution

A nano-electron fluidic logic (NFL) device that steers the propagation direction of surface plasma waves (SPWs) in a metal-oxide-semiconductor (MOS) structure, utilizing a patterned metallic gate and a 2D Electron Gas (2DEG) to achieve faster plasmon propagation, enabling femto-second switching speeds with minimal power dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If CMOS device dimensions are scaled down to enhance speed, then device density increases, but power consumption increases and leakage currents worsen

Engineering Contradiction:
Improvedevice speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent replaces conventional CMOS electronic switching with a plasma-based switching mechanism. Surface plasma waves (SPWs) are generated in a semiconductor channel and controlled by gate voltages to achieve logic operations. This plasma-based approach substitutes the traditional electron transport mechanism, enabling faster switching speeds (femto-second range) while reducing power consumption and leakage currents associated with scaled CMOS devices.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Productivity

If CMOS device dimensions are scaled down, then device density increases, but manufacturing complexity increases

Engineering Contradiction:
Improvedevice densityVSAvoidmanufacturing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent changes the fundamental operating parameters from conventional CMOS voltage switching to plasma wave generation and control. By adjusting gate voltages to generate and control SPWs, the system achieves high device density without the proportionally increasing manufacturing complexity of scaled CMOS. The plasma-based mechanism allows for simpler device structures that can be integrated at high densities.

Inventive Principle:
Principle #35Parameter changes

3Speed

If CMOS channel length is reduced for scaling, then speed increases, but short channel effects worsen

Engineering Contradiction:
Improveswitching speedVSAvoidshort channel effects
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent replaces the voltage-controlled electron transport mechanism of CMOS with a plasma wave propagation mechanism. Surface plasma waves are generated along the channel and controlled by gate voltages, enabling fast switching without suffering from short channel effects that plague scaled CMOS devices. The plasma-based approach maintains reliability even with reduced channel lengths.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

4Speed

If CMOS channel width to length ratio is increased for speed, then carrier mobility improves, but leakage currents increase

Engineering Contradiction:
Improvecarrier mobilityVSAvoidleakage currents
Core Design Contradiction:
SpeedVSObject-generated harmful factors

Solution Approach 1:

The patent changes the switching mechanism from voltage-controlled carrier flow to plasma wave propagation. By controlling SPW generation and propagation through gate voltages, the system achieves high effective carrier mobility for fast switching while minimizing leakage currents. The plasma-based mechanism inherently reduces the harmful leakage effects associated with increased channel width-to-length ratios in CMOS.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The NFL device achieves significantly faster switching speeds and reduced power consumption by controlling SPW propagation, overcoming the limitations of CMOS scaling and enhancing digital logic performance.

Implementation Method 1

The wave guiding structure facilitates propagation of the SPW within the structure so as to scatter/steer the SPW in a direction different from a pre-scattering direction

Methodology Applied
Scientific EffectPlasmon propagation:

Implementation Method 2

scatter/steer the SPW in a direction different from a pre-scattering direction

Methodology Applied
Scientific EffectScattering: Scattering

Implementation Method 3

guiding energy at a first plasmon frequency along a first path

Methodology Applied
Scientific EffectSurface plasma wave propagation:

Implementation Method 4

The bias SPW with a momentum vector (k→Bias) is excited by a bias current (IBias) to attain a momentum vector (k→Bias)

Methodology Applied
Scientific EffectMomentum transfer: Conservation of Momentum

Data Source

PatentUS8509584B2Nano-electron fluidic logic (NFL) device
Publication Date: 2013.08.13 DE LOS SANTOS HECTOR J
  • US8509584B2 patent drawing
  • US8509584B2 patent drawing
  • US8509584B2 patent drawing

AI summary

A nano-electron fluidic logic (NFL) device for controlling launching and propagation of at least one surface plasma wave (SPW) is disclosed. The NFL device comprises a metallic gate patterned with a plurality of terminals at which SPWs may be launched and a plurality of drain terminals a which the SPWs may be detected. A wave guiding structure such as a 2 DEG EF facilitates propagation of the SPW within the structure so as to scatter/steer the SPW in a direction different from a pre-scattering direction. A bias SPW is excited by an application of a control SPW with a momentum vector at an angle to the bias SPW and a control current with a wavevector which scatters the bias SPW in the direction of at least one output SPW, towards a drain terminal. The NFL device is rendered with device speed as a function of SPW propagation velocity.