Micro-LED Semiconductor Device With Inclined Surface Recess
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Solution Overview
Problem
Micro-sized light-emitting diodes are susceptible to external impacts and difficult to selectively separate from a wafer, often resulting in defects due to particles remaining during the separation process.
Innovation Solution
A semiconductor device with a specific structure including a first and second semiconductor layer, an active layer, and electrodes, featuring an inclined surface and a recess with controlled etching rates to enhance robustness and prevent particle occurrence during separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If micro-sized light-emitting diodes are manufactured, then energy efficiency and luminance are improved, but susceptibility to external impacts increases
Solution Approach 1:
The semiconductor layer is divided into multiple sub-semiconductor layers (first, second, third sub-semiconductor layers) with different etching rates. This segmentation allows selective removal of specific layers during separation processes, enabling clean detachment of micro-sized LEDs from the wafer while maintaining structural integrity and reducing susceptibility to external impacts.
Solution Approach 2:
Different regions of the semiconductor structure have different etching rates, creating local quality variations. The first sub-semiconductor layer has a higher etching rate than the second and third layers, allowing selective etching at specific locations. This enables precise control over the separation process, improving reliability during transfer operations.
2Volume of moving object
If micro-sized light-emitting diodes are manufactured, then device miniaturization is achieved, but difficulty in selective separation from wafer increases
Solution Approach 1:
The semiconductor structure is pre-configured with multiple sub-layers having different etching rates before the separation process. This preliminary arrangement of layers with varying etching characteristics enables selective removal of the first sub-semiconductor layer during separation, facilitating easy and clean detachment of miniaturized LEDs from the wafer without causing particle contamination.
3Ease of operation
If separation process is performed on micro-sized LEDs, then transfer to another substrate is enabled, but particle contamination occurs
Solution Approach 1:
The first sub-semiconductor layer is selectively extracted or removed from the semiconductor structure through controlled etching processes. This extraction creates a clean separation interface, allowing micro-sized LEDs to be transferred to another substrate without generating particles from the separation process, thus eliminating contamination while maintaining transfer capability.
Data Source
AI summary
Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.