Micro-LED Side-Contact Electrode for High-Resolution Displays

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Solution Overview

Problem

Micro-LEDs with vertical structures face challenges such as increased processing complexity, optical efficiency degradation, side light leakage, and insufficient heat dissipation due to deep etching and top electrode placement, which affect their performance and reliability, especially in high-resolution displays.

Innovation Solution

A micro-LED design featuring a side-contact electrode that covers the peripheral of a doped region, optionally with a multiple quantum well layer and mirror, and a protective layer, which reduces optical loss and enhances heat dissipation by eliminating the need for deep etching and top electrode placement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If deep etching is performed to reach the heavy doping region for Ohmic contact, then electrical contact is achieved, but processing complexity increases and manufacturing cost/yield/reliability deteriorates

Engineering Contradiction:
Improveelectrical contact reliabilityVSAvoidprocessing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the electrode from the top surface and relocates it to the side surface of the micro-LED. This eliminates the need for deep etching to reach the heavy doping region, as the side-contact electrode can be formed on the lateral surface without requiring access to the bottom n-EPI layer. The electrical contact function is maintained through the side-contact configuration while avoiding the complex deep etching process.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from a vertical top-contact configuration to a lateral side-contact configuration. By moving the electrode contact from the vertical dimension (top surface) to the lateral dimension (side surface), the design achieves electrical contact without requiring deep vertical etching, thereby simplifying the manufacturing process while maintaining contact reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If a transparent top electrode is used to achieve common electrode function, then electrical contact is established, but optical efficiency degrades by 5-20%

Engineering Contradiction:
Improveelectrode contact functionVSAvoidoptical efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent removes the transparent top electrode from the light-emitting path and relocates the electrode function to the side surface. This extraction eliminates the optical absorption and reflection losses (5-20%) that were inherent in using transparent conductive materials on the top surface, while the side-contact electrode maintains the common electrode electrical function without interfering with light emission.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

By relocating the electrode from the vertical top surface to the lateral side surface, the patent separates the electrical contact function from the optical path. The side-contact electrode performs the common electrode function in the lateral dimension while allowing light to pass through the top surface unobstructed, thereby eliminating the 5-20% optical efficiency loss.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Measurement precision

If micro-LED size is reduced to 10 μm or less for high-resolution display, then display resolution improves, but side light leakage increases and heat dissipation becomes insufficient

Engineering Contradiction:
Improvedisplay resolutionVSAvoidoptical efficiency
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The patent addresses side light leakage by introducing a reflective layer or light guide structure on the side surface, converting laterally propagating light back toward the vertical emission direction. This dimensional approach to light management allows miniaturization to 10 μm or less while maintaining optical efficiency by preventing side leakage even at reduced sizes.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Measurement precision

If micro-LED size is reduced to 10 μm or less for high-resolution display, then display resolution improves, but heat dissipation capacity decreases causing overheating

Engineering Contradiction:
Improvedisplay resolutionVSAvoidheat dissipation
Core Design Contradiction:
Measurement precisionVSTemperature

Solution Approach 1:

The patent introduces side surface heat dissipation pathways by attaching heat dissipation structures to the lateral surfaces of the miniaturized micro-LEDs. This adds lateral heat transfer dimensions to complement the traditional bottom heat dissipation, enabling effective thermal management even when the device size is reduced to 10 μm or less for high-resolution displays.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design simplifies processing, improves optical efficiency, reduces light leakage, and enhances thermal management, leading to better performance and reliability of micro-LEDs in high-resolution displays.

Implementation Method 1

a multiple quantum well layer is provided between the first type doped region and the second type doped region

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

a mirror is provided below the first type doped region

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS11024773B2Micro-LED with vertical structure, display device, electronics apparatus and manufacturing method
Publication Date: 2021.06.01 GOERTEK INC
  • US11024773B2 patent drawing
  • US11024773B2 patent drawing
  • US11024773B2 patent drawing

AI summary

The present invention discloses a micro-LED with vertical structure, display device, electronics apparatus and manufacturing method. The micro-LED with vertical structure comprises: a bottom electrode bonded on a display substrate; a first type doped region provided above the bottom electrode; a second type doped region provided above the first type doped region; and a side-contact electrode covering at least one part of a peripheral of the second type doped region.