Micro LED Sub-Pixel Isolation for High-Resolution Color Displays
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Solution Overview
Problem
Existing micro light-emitting display technologies face challenges in achieving high-resolution color images with efficient light emission, particularly in reducing sub-pixel size and preventing light leakage between pixels.
Innovation Solution
The development of a micro light-emitting display apparatus that includes a first semiconductor layer, an isolation structure, and light-emitting units configured to emit blue, green, and red lights. The light-emitting units feature a rod semiconductor layer with a specific geometry and a planarized structure, allowing for efficient light emission and reduced sub-pixel size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the sub-pixel size is reduced to achieve high-resolution display, then the display resolution is improved, but light leakage between pixels increases and manufacturing precision requirements worsen
Solution Approach 1:
The isolation structure divides the semiconductor layer into separate regions for different sub-pixels, creating physical barriers that prevent light leakage while maintaining small sub-pixel sizes for high resolution
Solution Approach 2:
The isolation structure is strategically positioned only between adjacent sub-pixels where light leakage occurs, rather than uniformly across the entire display, optimizing light isolation without compromising overall resolution
2Measurement precision
If the sub-pixel size is reduced to achieve high-resolution display, then the display resolution is improved, but the manufacturing precision requirements worsen
Solution Approach 1:
The isolation structure is formed before the light-emitting layers are deposited, establishing precise boundaries in advance that guide subsequent manufacturing steps and reduce precision requirements for later processes
Solution Approach 2:
The isolation structure extends vertically through the semiconductor layer, creating three-dimensional barriers that provide effective light isolation without requiring proportional increases in lateral manufacturing precision
3Device complexity
If conventional light-emitting structures are used, then the device complexity is low, but light emission efficiency worsens
Solution Approach 1:
The rod-shaped semiconductor structure with inclined surfaces redirects light emission paths, reducing total internal reflection and improving light extraction efficiency compared to conventional planar structures
Solution Approach 2:
The semiconductor layer is transformed from a conventional planar geometry to a rod structure with specific dimensional parameters (width, height, inclination angles), optimizing light emission properties while maintaining manufacturing feasibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the creation of high-resolution color images with improved light efficiency and reduced sub-pixel size, enhancing the display's resolution and manufacturing process efficiency.
Implementation Method 1
a first active layer provided in a first sub-pixel among the plurality of sub-pixels... the first active layer is configured to emit blue light
Implementation Method 2
a second active layer provided on the rod semiconductor layer... the second active layer is configured to emit green light
Implementation Method 3
an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels
Data Source
AI summary
A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.


