Micro-LED Electrode Structure for Higher Self-Assembly Transfer Yield
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Solution Overview
Problem
The development of Micro-LED technology is hindered by the difficulty of mass transfer, particularly due to low transfer yield in self-assembly technologies, where Micro-LEDs may not accurately snap into corresponding grooves.
Innovation Solution
A micro light-emitting diode (Micro-LED) design featuring symmetrical light-emitting structures with protruding P and N electrodes, which increases the contact probability and area with magnetic electrodes on a substrate, thereby improving transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If self-assembly technology is used for Micro-LED mass transfer, then transfer efficiency is improved, but transfer yield becomes very low
Solution Approach 1:
The invention divides the single electrode contact into multiple electrode contacts by creating both P-type and N-type semiconductor layers with corresponding electrodes. This segmentation allows multiple independent contact points, increasing the overall probability of successful transfer while maintaining the self-assembly process efficiency.
Solution Approach 2:
The invention creates different types of semiconductor layers (P-type and N-type) with distinct electrical properties at different locations within the same Micro-LED structure. This local differentiation enables multiple electrode contact opportunities, where at least one contact is guaranteed to succeed, thereby improving transfer yield without sacrificing transfer efficiency.
2Reliability
If traditional single light-emitting structure is used, then device complexity is low, but electrode contact probability with substrate is low
Solution Approach 1:
The invention segments the semiconductor structure into P-type and N-type layers with separate electrodes, creating multiple contact interfaces. This segmentation increases the probability of successful electrode contact with the substrate while the modular nature of the segmentation keeps the added complexity manageable.
Solution Approach 2:
The dual semiconductor layer structure serves multiple functions: it enables multiple electrode contacts for improved transfer yield, maintains light-emitting functionality, and provides electrical connectivity. This multi-functionality justifies the increased structural complexity by delivering multiple benefits simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced design significantly improves the batch transfer rate of Micro-LEDs to a substrate by increasing the contact area and probability of electrodes, thus addressing the low transfer yield issue in existing technologies.
Implementation Method 1
a P-type semiconductor layer; a first light-emitting layer, disposed on a side of the P-type semiconductor layer; a second light-emitting layer, disposed on another side of the P-type semiconductor layer
Implementation Method 2
the substrate defines a plurality of recesses, and each recess is arranged with a first magnetic electrode opposite to the P electrode and a second magnetic electrode opposite to the first N electrode and/or the second N electrode
Data Source
AI summary
A micro light-emitting diode and a display panel. The micro light-emitting diode includes a P-type semiconductor layer; a first light-emitting layer, disposed on a side of the P-type semiconductor layer; a second light-emitting layer, disposed on another side of the P-type semiconductor layer opposite to the first light-emitting layer; a first N-type semiconductor layer, disposed on a side of the first light-emitting layer away from the P-type semiconductor layer; a second N-type semiconductor layer, disposed on a side of the second light-emitting layer away from the P-type semiconductor layer; a P electrode, electrically connected to the P-type semiconductor layer; a first N electrode, connected to the first N-type semiconductor layer; and a second N electrode, connected to the second N-type semiconductor layer. Two light-emitting structures are formed.