Micro LED Light-Emitting Layout for Wavelength Uniformity
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Solution Overview
Problem
Conventional Micro LED display manufacturing methods result in uneven light-emitting wavelengths due to centrifugal forces during epitaxial growth, leading to variations in doping rates across the LED wafer, affecting display quality.
Innovation Solution
A light-emitting structure with a first region and a second region, where the second region surrounds the first, with varying distances between light-emitting units to create a sparse distribution in the second region, thereby equalizing the doping rate of light-emitting elements across both regions, reducing wavelength differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If light-emitting units are uniformly distributed across the LED wafer, then manufacturing process is simple, but doping rate becomes uneven due to centrifugal forces during epitaxial growth
Solution Approach 1:
The patent applies local quality by creating different distribution densities of light-emitting units in different regions of the wafer. Specifically, the center region has a first distribution density while the peripheral region has a second distribution density that is different from the first. This non-uniform spatial distribution compensates for the centrifugal force effects during epitaxial growth, ensuring uniform doping rates across the entire wafer while maintaining manufacturing simplicity.
2Measurement precision
If light-emitting units are densely packed to increase display resolution, then display quality improves, but wavelength uniformity deteriorates due to varying doping rates
Solution Approach 1:
The patent implements local quality by adjusting the distribution density of light-emitting units based on their position on the wafer. The center region and peripheral region have different distribution densities, which compensates for centrifugal force effects during epitaxial growth. This ensures that even when densely packed for high resolution, the doping rates remain uniform across different regions, thereby maintaining wavelength uniformity and display quality.
3Ease of manufacture
If multiple transfer steps are used to assemble LED units, then display device can be manufactured, but yield decreases due to process complexity
Solution Approach 1:
The patent applies the merging principle by integrating the light-emitting units directly onto the substrate in a single epitaxial growth process, eliminating the need for multiple separate transfer and assembly steps. By growing the LED units and substrate together in one continuous process, the patent reduces process complexity and minimizes handling steps, thereby significantly improving manufacturing yield while maintaining the ability to manufacture display devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform doping rates across the light-emitting structure, addressing the issue of uneven wavelengths and enhancing display quality by maintaining consistent light emission characteristics.
Implementation Method 1
a LED epitaxial wafer is usually grown epitaxially on a substrate firstly
Implementation Method 2
uneven light-emitting wavelengths due to centrifugal forces during epitaxial growth
Data Source
AI summary
A light-emitting structure includes: a first region and a second region, where the second region surrounds the first region; the first region includes a plurality of first light-emitting units, and the second region includes a plurality of second light-emitting units; and a distance between adjacent first light-emitting units is less than a distance between adjacent second light-emitting units in a circumferential direction or a radial direction of the light-emitting structure. The distance between the adjacent second light-emitting units of the second region arranged on the edge is large, which improves a doping rate of a light-emitting element in the second region, so that doping rates of the light-emitting element in the first region and the second region tend to be equal, thereby solving a problem of uneven light-emitting wavelengths in the first region and the second region when the light-emitting unit is prepared by epitaxy.