Microdevice Substrate Integration With Patterned Electrode Openings
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Solution Overview
Problem
The challenge lies in efficiently integrating millions of microdevices with circuits for every pixel with proper yield, as existing methods are costly, time-consuming, and face issues with bonding repeatability and reliability at small pad sizes.
Innovation Solution
A method involving transferring microdevices to a system substrate, forming a protective layer, patterning it for conductive electrodes, and connecting backplane elements, which enhances integration efficiency and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional bonding methods are used to integrate microdevices with circuits, then bonding reliability can be achieved, but integration time becomes excessively long and cost increases
Solution Approach 1:
The patent applies preliminary action by pre-forming conductive electrodes and bonding structures on the substrate before transferring microdevices. This allows bonding interfaces to be prepared in advance, eliminating time-consuming post-transfer bonding steps and enabling rapid integration while maintaining reliability through pre-optimized bonding configurations
Solution Approach 2:
The patent replaces traditional mechanical bonding processes with direct electrical and optical connections through integrated conductive electrodes. This substitution eliminates complex mechanical alignment and bonding steps, dramatically reducing integration time while maintaining connection reliability through precise lithographic patterning of conductive paths
2Manufacturing precision
If traditional integration methods are used, then circuit connections can be established, but manufacturing cost and processing time increase significantly
Solution Approach 1:
The patent merges multiple discrete manufacturing steps into a single integrated process. Conductive electrodes, bonding structures, and microdevice arrays are formed and connected in one unified fabrication sequence using lithographic patterning and batch processing, simultaneously achieving high precision connections and high throughput production
Solution Approach 2:
The patent changes manufacturing parameters by using lithographic patterning dimensions (sub-micron precision) instead of mechanical bonding tolerances. This parameter shift enables precise circuit connections to be formed rapidly through photochemical processes rather than slow mechanical alignment, dramatically improving both precision and productivity
3Area of stationary object
If bonding is performed at small pad sizes, then device density increases, but bonding repeatability and reliability deteriorate
Solution Approach 1:
The patent replaces mechanical bonding at small pad sizes with direct lithographic formation of conductive electrodes. This substitution eliminates the need for mechanical contact and force application at miniaturized bonding interfaces, achieving reliable electrical connections through precise pattern deposition rather than physical bonding, thus maintaining reliability while enabling high device density
Solution Approach 2:
The patent changes the bonding mechanism from mechanical contact to field-based electrical connection. By using conductive electrodes formed through lithographic patterning, the system achieves reliable connections at sub-micron dimensions where mechanical bonding becomes unpredictable, thereby maintaining bonding repeatability while maximizing device area utilization
Data Source
AI summary
An integrated optical display system includes a backplane with appropriate electronics, and an array of micro-devices. A touch sensing structure may be integrated into the system. In one embodiment, an integrated circuit and system is integrated on top of micro-devices transferred to a substrate. Openings in a planarization layer (or layers) may be provided to connect the micro-devices with electrodes and other circuitry. Light reflectors may be used to redirect the light, and color conversion layers or color filters may be integrated before the micro-devices or on the substrate surface opposite to the surface of micro-devices.