Monolithic Micro-LED Display Fabrication Without LED Transfer

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Solution Overview

Problem

The complexity of the two-step process in manufacturing micro-LED-based displays, which involves individually transferring micro-sized LEDs, increases manufacturing costs and difficulties in commercialization due to the need for precise and minute technology.

Innovation Solution

A method is developed to form multi-wavelength micro-LEDs on a single substrate using a single process, integrating a thin-film transistor (TFT) without a transferring process, allowing for the creation of a 3D light emitting structure and a current spreading layer, enabling the production of actively operating micro-LED-based displays with full color capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If individual transferring process is used to transfer micro-sized LEDs on display panel substrate, then micro-LED-based display can be manufactured, but manufacturing complexity and cost increase due to precise and minute technology requirements

Engineering Contradiction:
Improvedisplay qualityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the micro-LED formation process and TFT integration process into a single monolithic manufacturing process. Both micro-LEDs and TFTs are formed simultaneously on the same substrate through integrated epitaxial growth and patterning steps, eliminating the need for separate transferring operations and reducing manufacturing complexity while maintaining display quality

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent performs preliminary actions by pre-forming both micro-LED structures and TFT structures on a common substrate before final assembly. The n-type semiconductor layer is prepared in advance with integrated circuit patterns, and micro-LED structures are formed during the same epitaxial growth process, enabling subsequent straightforward integration without complex transferring steps

Inventive Principle:
Principle #10Preliminary action

2Reliability

If two-step process is used for micro-LED manufacturing, then micro-LEDs can be transferred to display panel, but manufacturing cost increases due to process complexity

Engineering Contradiction:
Improvedisplay performanceVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines two separate manufacturing steps (micro-LED fabrication and TFT integration) into one unified monolithic process. Both device types are created simultaneously on the same substrate through integrated semiconductor manufacturing steps, eliminating the need for separate transferring operations and reducing manufacturing cost while maintaining display performance

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent creates a universal manufacturing platform where a single epitaxial growth process and patterning sequence can produce both micro-LED structures and TFT structures. This multi-functional approach allows one manufacturing line to produce complete display assemblies with both light-emitting and control elements, simplifying production and reducing costs

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11990559B2Method of manufacturing micro-light emitting diode-based display and micro-light emitting diode-based display
Publication Date: 2024.05.21 KOREA ADVANCED INST OF SCI & TECH
  • US11990559B2 patent drawing
  • US11990559B2 patent drawing
  • US11990559B2 patent drawing

AI summary

A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.