MicroLED Isolation via Thin Sub-Structure Segmentation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Traditional microLED fabrication techniques result in wavelength shift and reduction in quantum efficiency due to etching through the pre-isolation LED layer structure, limiting the density and efficiency of light emission.

Innovation Solution

A method involving a shallow etch process that forms thick and thin sub-structures on the semiconductor substrate, where the thin sub-structures electrically isolate the microLEDs while maintaining the active region intact, preventing mobility of free electron carriers and preserving the original light emission characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If traditional etching process is used to isolate microLEDs, then microLED density can be increased, but wavelength shift and quantum efficiency reduction occur

Engineering Contradiction:
ImprovemicroLED densityVSAvoidlight emission quality
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent divides the isolation structure into two segments: thick sub-structures that provide physical separation and thin sub-structures that provide electrical isolation. This segmentation allows each component to perform its specific function optimally - thick structures prevent carrier diffusion while thin structures minimize impact on the active region, thereby maintaining microLED density without compromising wavelength stability or quantum efficiency

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different structural qualities at different locations: thick sub-structures are positioned where maximum isolation is needed (between adjacent microLEDs), while thin sub-structures are positioned closer to the active region where minimal interference is required. This local differentiation enables effective electrical isolation while preserving the integrity and emission characteristics of the active region

Inventive Principle:
Principle #3Local quality

2Reliability

If etching through active region is performed for isolation, then microLEDs are electrically isolated, but light extraction efficiency decreases

Engineering Contradiction:
Improveelectrical isolationVSAvoidlight extraction efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent applies partial action by forming thin sub-structures that provide sufficient electrical isolation without completely removing the material between microLEDs. The thin sub-structures extend only partially through the layer structure, stopping before completely separating the active regions. This partial isolation achieves the necessary electrical separation while leaving enough material intact to maintain light extraction efficiency and preserve the active region's optical properties

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances light extraction efficiency and maintains the desired wavelength range, allowing for higher density and efficient light emission at reduced device sizes, with individually addressable microLEDs that retain the integrity of the original epitaxial layer structure's efficiency and wavelength.

Implementation Method 1

Each one of the plurality of thin sub-structures is configured for preventing mobility of free electron carriers therethrough to electrically isolate each one of the thick sub-structures from every other one of the thick sub-structures

Methodology Applied
Scientific EffectElectron carrier mobility prevention: Electrical Resistance

Implementation Method 2

Active quantum wells (QWs) 130 are formed on bulk or prep layers 120... enabling the formation of an active region with desired light emission characteristics

Methodology Applied
Scientific EffectLight emission from semiconductor active region: Light Emitting Diode

Data Source

PatentUS20220254759A1Light Emission System with MicroLED Device Isolation
Publication Date: 2022.08.11 GOOGLE LLC
  • US20220254759A1 patent drawing
  • US20220254759A1 patent drawing
  • US20220254759A1 patent drawing

AI summary

A light emission system includes an array of micro light-emitting diodes (microLED)s. The array of microLEDs includes a semiconductor substrate, a prep layer formed on at least a portion of the semiconductor substrate, and an active region formed on the prep layer. The array of microLEDs also include a plurality of thick sub-structures forming an array on the active region, and a plurality of thin sub-structures formed on the active region, each one of the thin sub-structures being located between each adjacent pair of thick substructures. Each one of the thick sub-structures defines a shape and size of a corresponding one of the microLEDs. Each one of the thin sub-structures is configured for preventing mobility of free electron carriers therethrough to electrically isolate each one of the thick sub-structures from every other one of the thick sub-structures. Further, the plurality of microLEDs share the active region.