Solid-State Devices TRIZ Cases

A digital camera module package seals bonding wires using adhesive means and a transparent cover to protect the photosensitive area.

A steering angle sensor uses a quadrature encoder to detect wheel movement during standby mode.

A flexible radiation detector uses segmented phosphor layers to convert X-rays into visible light while maintaining structural flexibility.

Fin-type selector couples with storage element to form compact multi-time programmable resistive random access memory cells.

Optimizing the refractive index of the encapsulant reduces internal reflection losses, boosting luminous flux and color rendering for high CRI applications.

Forming a source contact on a drain region reduces source region size and prevents asymmetry coupling effects in curved control gates.

Dual emission layers in a top-emission display panel expand the light-emitting area, reducing current density and eliminating center IR drop issues.

A mediator between the black matrix and pixel region eliminates light mixing from metal film reflectance, enhancing contrast and image purity.

An interface coupling layer joins the lens molding part to the electrode layer in a light emitting device package.

Silicon nitride side wall films protect cross-point memory diodes from fixed charges, preventing junction leakage caused by organic insulator thermal steps.

Equalizing plug and gate heights merges formation steps, reducing unnecessary resistance and improving contact reliability.

A segmented low work function layer structure with a conductive etching-resistant barrier enhances electron transport in organic light-emitting devices.

Chemical-mechanical polishing defines a lower electrode in vase-shaped holes, preventing voids and seams that degrade charge capacity.

LPCVD silicon oxide bonding layers prevent microcavities and delamination during high-temperature treatments.

Repeated rapid thermal annealing of monolayer materials creates a uniform crystal structure, improving TMR by 13% while reducing resistance area.

A split gate non-volatile memory cell structure integrates with logic devices using a shared fabrication process.

A fluoropolymer hole selective layer modifies electrode work functions, reducing corrosion and hygroscopicity to extend device lifetime.

A thin film patterning method uses sequential three-layer deposition and dual photoresist masks to create precise micron-scale patterns.

Three-dimensional flash memory structures utilize stepped word lines to maximize integration density.

ZnSeTe quantum dots adjust the Se:Te ratio in a ternary core to narrow the full width at half maximum and boost quantum efficiency.

OLED emitter host energy matching suppresses exciplex formation, stabilizing device lifetime and color efficiency.

Silicon protection layers shield charge storage walls from phosphoric acid etchants, preserving integrity during sacrificial layer replacement.

Molded elastomeric optics on a pick-up tool form lenses directly on LEDs, resolving alignment errors and boosting brightness.

Stacking RGB LED layers via oxide-to-oxide bonding reduces thermal stress from coefficient mismatches and lowers processing temperatures.

Nested conductive layers increase effective gate width in select transistors, improving cutoff characteristics while maintaining manufacturing simplicity.

A lens with a refractive index below the organic light-emitting layer extracts forward light through controlled refraction.

A reflective electrode with inclined and flat regions directs light through a bank insulating layer to equalize optical paths across the display surface.

Exposing a backside dielectric layer during deposition reduces polysilicon grain size, preventing dopant penetration and improving electrical properties.

A silver reflecting electrode redirects light to increase luminance without raising current, avoiding heat generation and complex driving schemes.

Protrusion portions in the encapsulation layer extend the penetration path for gas and moisture, preventing degradation of electroluminescent devices.

Interposing a shielding wafer between the detector and read-out circuit blocks radiative emission that causes signal noise.

Segmented adhesive layers in flexible light-emitting panels prevent interlayer peeling by allowing controlled stress release during bending.

Thin sub-structures electrically isolate adjacent microLEDs while preserving the shared active region integrity.

Merging the bonding layer and vias into a single metal alloy structure resolves the trade-off between mechanical stability and current carrying capacity.

Single-layer perovskite composite films form in-situ p-i-n junctions to reduce turn-on voltage below the bandgap while boosting luminance intensity.

Dummy bit cells match signal distribution circuitry footprint to maintain pattern uniformity and reduce macro-loading effects.

A buried tri-gate fin vertical gate structure extends into an epitaxial layer to enhance electron transfer efficiency in image sensors.

A 3D color image sensor integrates rejection and infrared filters to capture visible and near-infrared light simultaneously.

Layered link lines separated by insulating layers prevent short-circuits and reduce power voltage resistance.

A transparent first cathode and reflective second cathode enable top and bottom light emission in separate pixel regions.

Plasma etching and laser cutting prevent backside notching, increasing die strength.

Embedding a thin film encapsulation structure into pixel defining and planarization layers improves impact resistance by preventing film layer peeling.

Selective plasma treatment modifies a metal oxide layer to form conductive electrodes and insulating banks within a single integrated structure.

A self-aligned resistive random access memory cell structure uses a Pr1-XCaXMnO3 layer deposited above patterned metal electrodes.

A concave substrate embeds a lower conductive layer to create a coplanar surface that eliminates step differences during thin-film transistor fabrication.

A semiconductor structure uses a doped source block to physically isolate the source contact region from the channel.

Multi-layer electrode units with heterogeneous metals reduce sensing delay time while maintaining high transmissivity through composite material structures.

Integrated under-screen imaging module merges fingerprint and face recognition sensors to resolve signal-to-noise trade-offs in full-screen devices.

A solid-state imaging device incorporates a counter dope region to manage impurity distribution and maintain transfer transistor performance.

An OLED light absorption dye layer filters 500-640 nm wavelengths to maintain color temperature while improving light out-coupling efficiency.