Microwave Output Correction for Stable Substrate Processing

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Solution Overview

Problem

Conventional microwave output apparatuses in semiconductor device manufacturing face challenges in stably forming films on substrates due to machine differences and varying processing conditions, leading to inconsistent inner temperatures in the process chamber.

Innovation Solution

A method involving the setting and storage of correction coefficients in tables, periodic acquisition of these coefficients, calculation of correction values, and adjustment of the microwave output level to maintain a stable preset level, ensuring consistent substrate processing regardless of machine differences or processing conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional microwave output apparatus is used, then substrate processing can be performed, but the inner temperature of the process chamber becomes unstable due to machine difference and processing conditions

Engineering Contradiction:

Improvestability of inner temperatureVSAvoidsensitivity to machine difference and processing conditions

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting the microwave output level based on elapsed time and acquisition timing. Correction coefficients are applied to modify the microwave output parameters, compensating for temperature deviations caused by machine differences and processing conditions, thereby stabilizing the inner temperature of the process chamber

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent implements feedback control by periodically acquiring correction coefficients based on actual temperature measurements and using these coefficients to adjust subsequent microwave output levels. This closed-loop feedback mechanism continuously compensates for temperature fluctuations, ensuring stable processing conditions despite variations in machine characteristics or processing parameters

Inventive Principle:

Principle #23Feedback

2Reliability

If microwave output level is adjusted to compensate for temperature variations, then temperature stability improves, but system complexity increases due to correction tables and calculation processes

Engineering Contradiction:

Improvestability of microwave output levelVSAvoidcomplexity of correction system

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-calculating and storing correction coefficients in correction tables before actual substrate processing. These correction coefficients are computed based on anticipated elapsed time and acquisition timing scenarios, allowing rapid lookup and application during processing without real-time complex calculations, thus reducing system complexity while maintaining temperature stability

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent replaces complex real-time mechanical adjustment systems with a computational approach using correction tables and algorithms. Instead of physical adjustments during processing, the system uses pre-computed correction values stored in memory, substituting mechanical complexity with information processing that is easier to control and reproduce

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for stable film formation on substrates by maintaining a consistent inner temperature in the process chamber, unaffected by machine differences or processing conditions, thereby enhancing the reliability of the semiconductor device manufacturing process.

Implementation Method 1

a substrate may be processed with a microwave in a substrate processing apparatus used in a manufacturing process of a semiconductor device

Methodology Applied

Scientific EffectMicrowave heating: Dielectric Heating

Data Source

PatentUS20230106341A1Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Publication Date: 2023.04.06 KOKUSAI DENKI KK

AI summary

There is provided a technique capable of stably form the film on a substrate regardless of machine difference or processing conditions. According to an aspect of the present disclosure, there is provided a technique that includes: (a) setting correction coefficients for correcting an output level of microwave; (b) storing correction tables containing the correction coefficients set in (a); (c) acquiring one or more correction coefficients from at least one correction table periodically from a start of outputting of the microwave; (d) calculating a correction value for an output preset level of the microwave from the one or more correction coefficients acquired in (c); (e) correcting the output preset level of the microwave by using the correction value calculated in (d); and (f) processing a substrate by supplying the microwave into a process chamber with the output preset level of the microwave corrected in (e).