Microwave Surface-Wave Plasma Device for Uniform Density
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Solution Overview
Problem
Conventional plasma processing systems face challenges in achieving uniform plasma density across substrates due to non-uniform power emission from plasma sources, leading to non-uniform etching or treatment results.
Innovation Solution
A plasma processing system with power transmission elements that include an interior cavity and a continuous slit with a dielectric component, allowing for even distribution of electromagnetic energy around the substrate, and potentially combining circular and linear power transmission elements to control plasma density profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If plasma sources are located opposite or parallel to the substrate, then the plasma source can be positioned for power transmission, but the plasma density becomes non-uniform across the substrate
Solution Approach 1:
The patent transitions from conventional parallel/opposite plasma source positioning to a surface-wave configuration where the plasma source is positioned at the periphery of the substrate, utilizing the edge geometry to generate plasma that propagates across the substrate surface. This dimensional repositioning enables uniform plasma density distribution while maintaining effective power transmission.
Solution Approach 2:
The invention positions the plasma source specifically at the periphery or edge region of the substrate rather than uniformly across the entire surface. This localized positioning at the edge enables the generated plasma to propagate uniformly across the substrate, solving the non-uniformity problem while maintaining power transmission efficiency.
2Manufacturing precision
If the plasma source size is increased to improve plasma density uniformity, then plasma density uniformity may improve, but the device becomes impractical or impossible to implement
Solution Approach 1:
Instead of increasing the plasma source size in the conventional parallel configuration, the patent repositions a compact plasma source to the periphery of the substrate and utilizes surface-wave propagation to distribute plasma uniformly across the entire substrate area. This achieves uniformity without increasing source size or complexity.
Solution Approach 2:
The invention introduces surface-wave propagation as an intermediary mechanism that carries plasma from the compact peripheral source across the substrate surface. This mediator enables a small source to achieve uniform plasma distribution over a large area, avoiding the need for a large plasma source.
3Device complexity
If conventional plasma sources are used, then the system structure is simple, but the plasma density near the edge of the substrate is non-uniform
Solution Approach 1:
The patent inverts the conventional plasma source positioning by placing it at the periphery or edge of the substrate rather than in the center or parallel position. This inverted configuration enables the plasma to propagate uniformly across the substrate, including the edge regions, while maintaining relatively simple system structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances plasma density uniformity, particularly near the edges of substrates, improving the consistency of etching and treatment processes.
Implementation Method 1
one or more power transmission elements that can emit electromagnetic energy to ionize gas
Implementation Method 2
The electromagnetic energy may be generated by a microwave energy source that may be coupled to the interior cavity. The microwave energy may propagate through the interior cavity that emits microwave energy from the continuous slit
Implementation Method 3
The continuous slit may include a dielectric component that may be arranged to cover at least a portion of the continuous slit or opening. The dielectric component may be configured to enable the transmission electromagnetic energy or power signal into the plasma chamber
Data Source
AI summary
A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.