Electric Discharge Tubes TRIZ Cases

Inclining and rotating the substrate during ion irradiation selectively etches barrier and seed layers at recess corners.

An insulative block features conductive plating layers on its surface and through holes to support coaxial contact probes.

Shower nozzles inject mixed gas toward silicon wafer edges to resolve thickness uniformity issues in chemical vapor deposition.

Scanning electron beams maintain shaping plane temperature without a blanking mechanism, preventing energy loss and contamination risks.

Isotopically-enriched boron compounds improve ionization efficiency and beam current, reducing decomposition rates to extend ion source life.

A load lock system uses a particle shield plate and bottom seal to isolate samples from component debris.

A heat storage tray maintains substrate temperature during transfer, preventing film stress caused by thermal fluctuations.

A plasma processing apparatus uses a movable electrical conductor to control high-frequency power distribution across the electrode surface.

A cooled ion implanter maintains substrate temperature between -150°C and 30°C during implantation to control microbubble size.

A retractable detector moves between inserted and retracted positions to resolve column obstruction that limits angular coverage of x-ray photons.

Side wall electric connection members replace central posts, resolving light blockage and structural complexity in illuminating building blocks.

Real-time optical interference monitoring resolves groove depth measurement contradictions during plasma etching, improving processing yield.

Alternating silicon and boron nitride layers inhibit oxygen diffusion to prevent substrate oxidation and cracking.

Aluminum isopropoxide deposition forms selective AlOx etch stop layers on copper or tungsten, preventing dielectric damage and Cu diffusion.

An arc quenching assembly redirects residual energy to a dedicated store using electronic switches.

Aluminum nitride electrostatic chuck with embedded cooling channels controls wafer temperature distribution.

Introducing heat transfer gas between a magnetic focus ring and mounting stage resolves adhesion issues while maintaining temperature control flexibility.

A semiconducting electrode integrates a high conductivity layer to confine RF signals within the plasma processing region.

A radiation detector uses a cascade structure of anode strips and cathode films separated by insulator films to detect ionizing radiation.

A hermaphroditic electrical connector assembly uses alternating standoffs and indentations to enable reliable blind mating between identical board-to-board units.

Composite electrodes with conductive cores and SUS outer units stabilize voltage and plasma uniformity by preventing thermal deformation.

Curved showerhead surfaces adjust plasma density to minimize film stress non-uniformity and overlay errors.

Real-time load cell feedback dynamically adjusts chucking voltage and backside gas pressure to minimize excessive clamping force that causes workpiece defects.

Nitrogen plasma protects the chamber from hydrogen damage while curing gate stack defects.

A silicon upper electrode cleaning method uses sequential oxygen and carbon tetrafluoride plasma steps to remove contaminants from the processing chamber.

Mechanical interlocking bonds sputtering target components through plastic deformation into undercut structures.

Segmented ceramic nozzles block plasma backflow, preventing electrode erosion and maintaining chamber integrity.

A stray light suppression part blocks ultraviolet rays from reaching the sensor in an electron beam device.

Pulsed bias on electrostatic chucks removes polymer byproducts from confined gaps without damaging the surface, extending component lifespan.

A showerhead assembly with higher aperture density at the edge zone delivers reactive species to the substrate.

Plasma energy supply reduces monomer molecular weight in exhaust pipes to suppress polymer deposits on pressure control valves.

A magnetic levitation stage device uses opposing magnets and coils to support a movable portion for precise object positioning.

Phase transition enables gas infiltration into resin irregularities, resolving long processing times while maintaining high cleaning effectiveness.

Power transmission elements with interior cavities and continuous slits emit electromagnetic energy to generate plasma.

Periodic TCP coil heating minimizes thermal cycling and particle generation on the faraday shield, enhancing semiconductor manufacturing yield.

A gas-flow adjusting mechanism directs etching gas from the substrate periphery to the center.

A high-frequency generator control circuit monitors transmitted power signals to regulate output levels and protect passive components from overload.

Infeed and outfeed roll groups manage film tension to prevent wrinkles while gas channels enhance thermal conductance.

A substrate supporting member with a recessed area and auxiliary protruding area channels gas between the substrate and the support.

Segmenting the apparatus into a detachable main body and auxiliary unit resolves the contradiction between miniaturization and beam stability.

Segmented heating and active liquid cooling control the plasma head temperature below 60°C, eliminating warm-up time for wafer bonding.

Flash trim sequences correct radial thickness variations in core features, resolving critical dimension non-uniformity during semiconductor manufacturing.

Dielectric bottom plate with embedded conductors reduces metal contamination while maintaining consistent ionization over moving substrates.

Widened ground terminals reduce mutual inductance between high-speed differential signal lines.

A pulsing power supply generates high voltage pulses to manage ion acceleration within plasma chambers.

Gas cluster ion beams modify semiconductor surfaces to increase dopant penetration depth while preventing end-of-range lattice damage.

Pass gates disconnect comb fingers to isolate shorts, enabling voltage contrast imaging that reduces milling time and cost.

A sample holder integrates a semiconductor light emitting element into its lid to irradiate specimens through silicon chip apertures.

A resin core coated with a metal film stabilizes electrical resistance through elastic deformation.