Plasma Treating Process Chamber for Gate Stack Reliability
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Solution Overview
Problem
Defects such as atomic vacancies and interfacial defects in gate dielectric layers of semiconductor substrates cause leakage, thermal instability, and mobility instability, necessitating an improved method for treating semiconductor substrates.
Innovation Solution
A method and apparatus for plasma treating a process chamber using nitrogen or oxygen plasmas, followed by hydrogen containing plasma treatment of the substrate to cure defects in the gate stack, with the process chamber protected by a ceramic coating and pre-treatment to prevent damage from hydrogen plasma.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen containing plasma is used to treat the substrate to cure defects in the gate stack, then reliability is improved, but the process chamber components are damaged by hydrogen plasma
Solution Approach 1:
The process chamber is treated with nitrogen or oxygen plasma before substrate processing to create a protective layer on chamber components. This preliminary action prevents hydrogen plasma from damaging the chamber during subsequent substrate treatment, allowing the beneficial hydrogen plasma effects on the gate stack to proceed without harming the equipment.
Solution Approach 2:
Nitrogen or oxygen plasma acts as an intermediary protective layer between the hydrogen plasma and the process chamber components. This intermediate plasma treatment modifies the chamber surface to be resistant to hydrogen plasma attack, enabling the hydrogen plasma to cure defects in the gate stack without damaging the chamber.
2Productivity
If conventional plasma treatment is used without chamber pre-treatment, then the substrate can be processed, but the process chamber components suffer from hydrogen plasma-induced damage
Solution Approach 1:
The process chamber undergoes preliminary nitrogen or oxygen plasma treatment before substrate processing. This preparatory step protects chamber components from subsequent hydrogen plasma exposure, enabling continuous substrate processing without chamber damage or downtime for chamber maintenance.
3Object-affected harmful factors
If nitrogen or oxygen plasma is used to treat the process chamber before substrate processing, then the process chamber is protected from hydrogen plasma damage, but additional process steps are required
Solution Approach 1:
The nitrogen or oxygen plasma treatment serves multiple functions: it protects the process chamber from hydrogen plasma damage and can simultaneously prepare the substrate surface for subsequent processing. This multi-functionality reduces the need for separate dedicated protection steps, simplifying the overall process despite the additional plasma treatment required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces leakage and improves the reliability of the gate stack, while protecting the process chamber components from hydrogen plasma-induced damage, resulting in enhanced semiconductor substrate processing.
Implementation Method 1
plasma treating a process chamber with a plasma containing nitrogen or oxygen
Implementation Method 2
plasma treating the stack disposed on the substrate
Data Source
AI summary
Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.