Upper Electrode Adhesion in MIM Capacitors via Reinforcing Film
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Solution Overview
Problem
The reduction in width of the upper electrode of upper MIM capacitors in semiconductor devices leads to reduced adhesion with the dielectric film, causing detachment or peeling, while increasing the width to prevent detachment results in peeling from dielectric film steps.
Innovation Solution
A semiconductor device configuration with a reinforcing film on the dielectric film, in contact with the upper electrode, and a method of manufacturing involving a metal film, dielectric films, and a reinforcing film to securely attach the upper electrode, preventing detachment from the dielectric film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the width of the upper electrode of the upper MIM capacitor is reduced to ensure insulation from adjacent device structures, then the insulation performance is improved, but the adhesion between the upper electrode and the underlying dielectric film deteriorates, causing detachment or peeling
Solution Approach 1:
A reinforcing film is introduced as an intermediary layer between the upper electrode and the second dielectric film. This reinforcing film has better adhesion properties than the dielectric film, serving as a mediator that prevents the upper electrode from detaching while allowing the electrode width to be reduced for improved insulation.
Solution Approach 2:
The patent uses a composite structure combining the second dielectric film and the reinforcing film. The reinforcing film is made of a material with different properties (higher adhesion strength) than the dielectric film, creating a composite system that simultaneously provides electrical insulation and mechanical reinforcement to prevent electrode detachment.
2Reliability
If the width of the upper electrode of the upper MIM capacitor is increased to prevent detachment from the dielectric film, then the adhesion is improved, but the upper electrode may detach or peel from the steps of the dielectric film
Solution Approach 1:
The reinforcing film acts as an intermediary that provides continuous support across the steps of the dielectric film. By placing the upper electrode on the reinforcing film rather than directly on the stepped dielectric film, the electrode is prevented from peeling at the steps while maintaining adequate adhesion.
Solution Approach 2:
The patent changes the physical parameters of the structure by introducing a reinforcing film with different mechanical and adhesive properties. This parameter change allows the upper electrode to maintain adhesion without needing to increase its width, thereby preventing peeling at the dielectric film steps.
3Area of stationary object
If the width of the upper electrode is reduced to form smaller MIM capacitors, then the device size is reduced, but the adhesion between the electrode and dielectric film deteriorates
Solution Approach 1:
The reinforcing film serves as a mediator that decouples the relationship between electrode width and adhesion strength. This allows the upper electrode to be made narrower for smaller device size while the reinforcing film compensates for the reduced adhesion area, preventing detachment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reinforcing film securely attaches the upper electrode, allowing it to be formed with a smaller width, reducing device size and manufacturing costs while maintaining adhesion, and reducing the size of MIM capacitors by half compared to single-layer structures.
Implementation Method 1
a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode
Implementation Method 2
forming a reinforcing film on the second dielectric film by CVD, sputtering, or vapor deposition
Implementation Method 3
forming a reinforcing film on the second dielectric film by CVD, sputtering, or vapor deposition
Implementation Method 4
forming a reinforcing film on the second dielectric film by CVD, sputtering, or vapor deposition
Data Source
AI summary
A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion, a second dielectric film having a first portion on the lower electrode and a second portion on the first dielectric film, the second portion of the second dielectric film being integral with the first portion of said second dielectric film, an upper electrode on a portion of the second dielectric film, and a reinforcing film disposed on the second dielectric film and in contact with a side of the upper electrode.