MIM Capacitor Segmented Electrodes Copper High-k Dielectric
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Solution Overview
Problem
In semiconductor manufacturing, integrating copper fabrication processes to produce metal-insulator-metal (MIM) capacitors with low resistance is a key challenge, especially in deep sub-micro semiconductor processes, as conventional methods face issues with parasitic capacitance and electro-migration resistance.
Innovation Solution
A method involving the formation of a bottom electrode, a patterned middle electrode, and a top electrode with patterned dielectric layers, where the top electrode contacts the bottom electrode directly, and a second dielectric layer is formed between the middle and top electrodes, using copper and high-k dielectric materials to reduce resistance and parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional capacitor structures are used in deep sub-micro semiconductor processes, then manufacturing simplicity is maintained, but resistance and parasitic capacitance increase
Solution Approach 1:
The capacitor structure is divided into multiple segments: a bottom electrode, a middle electrode with first dielectric layer, and a top electrode with second dielectric layer. This segmentation allows each part to be optimized independently, reducing overall resistance and parasitic capacitance while managing structural complexity through modular design
Solution Approach 2:
The patent transitions from conventional planar capacitor structures to a three-dimensional stacked configuration with electrodes and dielectric layers arranged in multiple dimensions. This dimensional change increases capacitance density and reduces parasitic effects by separating electrical paths spatially
2Productivity
If capacitor density is increased for high integration, then integration density improves, but parasitic capacitance increases
Solution Approach 1:
The capacitor is segmented into distinct functional regions with separate dielectric layers (first and second dielectric layers) and electrodes. This segmentation allows for optimized spacing and isolation between capacitive elements, increasing integration density while controlling parasitic capacitance through physical separation
Solution Approach 2:
Dielectric layers serve as intermediary materials between adjacent electrodes and capacitor structures. These intermediaries provide electrical isolation that reduces parasitic capacitance coupling between neighboring structures, enabling higher integration density without proportionally increasing parasitic effects
Data Source
AI summary
A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a first conductive layer, a first dielectric layer, and a second conductive layer on the material layer; patterning the first dielectric layer and the second conductive layer to form a patterned first dielectric layer and a middle electrode; forming a second dielectric layer on the first conductive layer and the middle electrode; removing part of the second dielectric layer to form a patterned second dielectric layer; forming a third conductive layer on the first conductive layer and the patterned second dielectric layer, wherein the third conductive layer contacts the first conductive layer directly; and removing part of the third conductive layer to expose part of the patterned second dielectric layer.