Solid-State Devices TRIZ Cases

A display panel substrate divides into multiple areas with electrode series and conducting wires for flexible coupling.

Integrates common electrode signal lines with data lines in the source-drain layer and connects them to the common electrode layer via through-holes.

Continuous conductive layer forms electrodes and redistribution paths, eliminating metal filling steps that increase fabrication complexity.

A semiconductor memory cell uses a chalcogen-based bi-directional switching pattern connected in series with a magnetic tunnel junction.

An insulating mesoporous Al2O3 scaffold enables low-temperature processing below 150°C, resolving high-cost manufacturing and reproducibility issues.

A conduction function layer shields external interference signals in flexible displays.

Inversion bit lines eliminate implanted conductors, resolving the contradiction between voltage conduction reliability and cell area reduction.

A parallel array of semiconductor rectifying devices aligned to receive electromagnetic waves at the same phase.

Concave spacer profiles align photodiodes with curved lenses, resolving flat sensor edge resolution limits.

Black matrix opaque conductor lines form single-layered touch sensing patterns in in-cell OLED displays.

A lid member uses differential pressure to seal an organic semiconductor substrate during vacuum processing.

Forming a light shielding wall on an optical filter prevents substrate warping from heat treatment while blocking stray light.

A stacked semiconductor device uses inductive coupling for non-contact signal transmission between main and functional chips.

Segmented laser processing transforms electrode layers to stabilize repairs and prevent short circuits in bright spot defects.

A semiconductor device uses a high-k dielectric film to store electrical charges in the channel region.

Storage capacitor line extended sections form bypass routes across scanning signal lines to maintain electrical continuity.

Selective lining removal via radiation weakening prevents stringers and critical dimension thinning during high aspect ratio trench formation.

Spacer pillars segment adhesive deposition to reduce contact resistance between auxiliary electrodes and top electrodes.

An organometallic complex dopant merges phosphorescent and TADF metal centers to boost light emission in organic electroluminescence devices.

Incorporating a perovskite thin film on an organic light-emitting device increases the color gamut, resolving limitations in display quality.

A curved light transmitting layer replaces rigid polarizers in flexible display panels to enable bending.

Extending the nitride layer into isolation trenches shuts off corner fringing fields to restore programming reliability in sub 50 nm channels.

A localized organic film layer in the non-display area absorbs impact energy, preventing crack transmission to the display region during cutting.

A vertical pillar structure with a laterally extending mesa supports conductive lines for compact integration.

A semiconductor memory device uses SOI transistors with a BOX layer to adjust threshold voltage and reduce leakage currents.

A lighting device frame seals a light-emitting element and phosphor layer with a light-transmitting resin to protect components from air exposure.

Shared epitaxial layers merge transistor regions to increase device density while managing fabrication complexity.

Laser modified regions and dry etching grooves prevent incomplete cutting while maintaining substrate strength.

Pre-cut grooves wider than scribe lines fill with encapsulant to protect exposed metal traces from moisture diffusion and mechanical damage.

Recessing the device layer into a substrate cavity minimizes crystalline defects and leakage current, improving quantum efficiency for near-infrared detection.

Segmented radial shoulders distribute torque loads to reduce peak stress and extend connection service life.

Inkjet-deposited glass powder forms local seals that protect flexible electroluminescent elements from moisture and oxygen ingress.

An inorganic encapsulation layer protects the second color control layer, minimizing color deviation and brightness reduction over time.

Lithographically defined metasurfaces eliminate microlens ghost images and fabrication complexity while preserving wide field of view.

Segmented copper electrodes with high-k dielectrics lower parasitic capacitance in deep sub-micro semiconductor processes.

Separate electrode layers detect bending and touch actions through capacitance changes, preventing interference between sensing modes.

Merging individual encapsulation into a single integral lens structure reduces processing time while maintaining manufacturing precision for batch production.

Columnar substrate protrusions direct silicon epitaxial growth along memory hole side walls, resolving depth fluctuations in high aspect ratio structures.

Segmented etching forms selection and resistance patterns independently, preventing damage during manufacturing.

An oligomer-based siloxane resin with dispersed inorganic oxide particles prevents water and gas infiltration into light-source semiconductor devices.

An intermediary dummy common electrode absorbs high-energy particles and oxygen byproducts, preventing physical damage to the functional electrode.

Trench-based vertical MOSFETs suppress leakage current in high-density RRAM and MRAM cells without increasing lateral footprint.

Hydrophilic treatment modifies photoresist surfaces to improve quantum dot adhesion and prevent damage during mass production patterning.

A hybrid particle structure integrates an inorganic core, electron transport layer, and crystalline perovskite light absorption layer for efficient photoelectric conversion.

Segmented phosphor zones with intermediate layers reduce reabsorption losses and resolve manufacturing precision trade-offs.

A deposition apparatus divides a chamber into multiple areas to spray organic material onto substrates while transferring units move the source between zones.

Segmented etching forms precise contact holes without sacrificial layers, reducing manufacturing complexity and protecting oxide semiconductors from damage.

Vertical transmission gates stack within the semiconductor substrate to enable pixel miniaturization.

Cross-linked organic passivation layer stabilizes threshold voltage and mobility, preventing bias stress degradation in thin film transistors.