MIM Capacitor SiGe Electrode Thickness Uniformity via Organic Silicon Adsorption

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

As semiconductor devices become more integrated, the available space for capacitors decreases, making it challenging to maintain or increase capacitance while ensuring a uniform and reproducible thickness of the silicon germanium (SiGe) layer in metal-insulator-metal (MIM) capacitor structures.

Innovation Solution

A method involving the adsorption of an organic silicon source onto the surface of the first electrode layer, followed by the formation of a second electrode layer, which includes a silicon germanium layer, using a batch-type deposition apparatus, ensures a uniform and reproducible thickness of the SiGe layer independent of the delay time between electrode formations, and prevents crystallization of the dielectric layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the delay time between forming the first electrode layer and the second electrode layer is increased to improve productivity, then the manufacturing efficiency is improved, but the thickness uniformity of the SiGe layer deteriorates

Engineering Contradiction:

Improvemanufacturing efficiencyVSAvoidthickness uniformity of SiGe layer

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

An organic silicon source is adsorbed onto the surface of the first electrode layer in advance, before forming the second electrode layer. This preliminary action maintains a reactive surface that enables uniform SiGe layer formation even after extended delay periods, thereby allowing increased productivity without sacrificing thickness uniformity.

Inventive Principle:

Principle #10Preliminary action

2Productivity

If the temperature is increased to improve the deposition rate of the SiGe layer, then the productivity is improved, but the dielectric layer crystallizes which is harmful

Engineering Contradiction:

Improvedeposition rate of SiGe layerVSAvoidcrystallization of dielectric layer

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The deposition temperature is optimized to a specific range (400-500°C) that enables sufficient deposition rate while remaining below the crystallization temperature of the dielectric layer. Additionally, the use of organic silicon source with pre-adsorption allows effective deposition at this moderate temperature range, resolving the contradiction between deposition rate and dielectric layer stability.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces thickness distribution and resistance variations in the SiGe layer, enhancing the productivity and reliability of semiconductor devices by minimizing process defects and ensuring consistent capacitance.

Implementation Method 1

adsorbing an organic silicon source onto a surface of the first electrode layer to define the organic silicon layer thereon

Methodology Applied

Scientific EffectAdsorption: Adsorption

Implementation Method 2

forming a multi-layer capacitor upper electrode on the dielectric layer opposite the capacitor lower electrode

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 3

forming the second electrode layer on the organic silicon layer

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS9496328B2Methods of manufacturing capacitors for semiconductor devices

Publication Date: 2016.11.15 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.