MIM Capacitor Step Structure for Moisture-Resistant Dicing

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Solution Overview

Problem

Conventional semiconductor devices, such as capacitors, are prone to film chipping and peeling at the end portions during the dicing process, leading to moisture ingress and corrosion of inner electrodes, which compromises their moisture resistance.

Innovation Solution

A semiconductor device structure featuring a substrate with a step or groove on its surface, where an insulating film, dielectric film, moisture-resistant film, and protective layer are strategically positioned to lengthen the moisture entry path and enhance moisture resistance, including a MIM capacitor configuration with outer electrodes penetrating through protective and moisture-resistant films.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If films are formed onto the end portion of the element, then the capacitor structure is completed, but film chipping and peeling occur during dicing, leading to moisture ingress and electrode corrosion

Engineering Contradiction:
Improvemoisture resistanceVSAvoidfilm chipping and peeling
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The invention introduces a groove structure that creates a three-dimensional configuration on the substrate surface. This groove forms a physical barrier that extends the moisture entry path from a two-dimensional surface issue into a three-dimensional protective structure, effectively preventing moisture ingress while avoiding film chipping and peeling at the element ends during dicing

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The groove acts as an intermediary barrier between the external environment (moisture) and the capacitor films. By positioning the groove between the moisture source and the film edges, it mediates the interaction by blocking moisture access to vulnerable film regions, thereby preventing both film damage and moisture-induced corrosion

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the element structure is simplified for manufacturing, then production efficiency increases, but moisture resistance decreases due to direct exposure of electrode ends

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidmoisture resistance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The substrate surface is segmented into distinct regions by the groove, creating a separated configuration where the capacitor element resides in one area and the groove forms a protective boundary in another. This segmentation allows the films to be formed only in the necessary region while the groove provides additional moisture protection without requiring complex multi-layer extensions at the element ends

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

By introducing the groove as a vertical feature on the substrate surface, the invention adds a dimensional element that enhances moisture resistance without increasing the planar footprint or complicating the film formation process. The groove creates a physical barrier that extends the moisture entry path while maintaining manufacturing simplicity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20240071691A1Semiconductor device
Publication Date: 2024.02.29 MURATA MFG CO LTD
  • US20240071691A1 patent drawing
  • US20240071691A1 patent drawing
  • US20240071691A1 patent drawing

AI summary

A capacitor that includes: a substrate having a first principal surface and a second principal surface opposed to each other in a thickness direction, wherein the first principal surfaces includes a step in a plan view from the thickness direction; an insulating film on the first principal surface of the substrate; a first electrode layer on the insulating film and positioned within a boundary defined by the step in the plan view; a dielectric film on the first electrode layer; a second electrode layer on the dielectric film; a moisture-resistant film on the dielectric film and the second electrode layer; a protective layer on the moisture-resistant film; and an outer electrode penetrating through the protective layer.