MIM Structure Gold Copper Electrode Transfer Method
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Solution Overview
Problem
The production of Metal-Insulator-Metal (MIM) structures for MEMS and NEMS components faces challenges due to high series resistance caused by platinum electrodes, which are necessary to withstand high temperatures for perovskite insulator crystallization, while gold or copper electrodes have lower resistivity but degrade at these temperatures.
Innovation Solution
A method involving the production of MIM structures with gold or copper electrodes on both sides of the insulator layer, where the gold or copper layers are integrated after the insulator layer is formed, avoiding the use of platinum and RuO2 layers, and utilizing a temporary substrate for the insulator layer and one gold or copper layer, then transferring to a definitive substrate for integration, maintaining low resistivity and simplifying the production process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If platinum layers are used for the lower electrode to withstand high crystallisation temperatures (400-900°C), then the electrode can survive the thermal process, but the series resistance increases due to high platinum resistivity
Solution Approach 1:
The gold or copper layer is deposited on the insulator layer before the thermal crystallisation process, then a temporary substrate is used to protect it during the high-temperature process. After crystallisation, the temporary substrate is removed and the gold/copper layer is transferred to the final substrate, achieving low resistance without platinum
Solution Approach 2:
A temporary substrate acts as an intermediary carrier that protects the heat-sensitive gold or copper electrode during the high-temperature crystallisation process. This mediator allows the low-resistance material to survive temperatures it would normally degrade
2Reliability
If gold or copper layers are used for both electrodes to minimise series resistance, then the quality factor increases, but the electrodes degrade at the high temperatures required for perovskite insulator crystallisation
Solution Approach 1:
The gold or copper layer is deposited on the insulator layer before the thermal crystallisation process, then a temporary substrate is used to protect it during the high-temperature process. After crystallisation, the temporary substrate is removed and the gold/copper layer is transferred to the final substrate, achieving low resistance without platinum
Solution Approach 2:
A temporary substrate acts as an intermediary carrier that protects the heat-sensitive gold or copper electrode during the high-temperature crystallisation process. This mediator allows the low-resistance material to survive temperatures it would normally degrade
3Stability of the object's composition
If RuO2 and platinum layers are added to form a diffusion barrier and protect the lower electrode, then gold diffusion into platinum is prevented, but the electrode structure becomes more complex and minimum resistivity is limited
Solution Approach 1:
The invention extracts and removes the RuO2 and platinum layers from the electrode structure, replacing them with a simplified gold or copper layer on a temporary substrate. This eliminates the complex multi-layer structure while achieving the same protective function through the temporary substrate approach
Solution Approach 2:
The temporary substrate serves as a disposable carrier that is used only during the crystallisation process and then removed. This short-living component enables the use of simple, low-resistance gold or copper electrodes without requiring complex permanent diffusion barrier structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces series resistance, maintains low electrode resistivity, and simplifies the production process by eliminating the need for platinum and RuO2 layers, while allowing for the use of perovskite materials like PZT without lead diffusion issues, enhancing the performance of MIM structures for RF applications.
Implementation Method 1
The insulator material used in these structures is generally a perovskite structure material, such as for example BST (Ba1-XSrXTiO3), BCTZ (BaXCa1-XTYZr1-YO3) or PZT (Pb(ZrX,Ti1-X)O3), which requires, for its crystallisation, reaching temperatures comprised between around 400° C. and 900° C.
Implementation Method 2
producing at least one first gold and/or copper layer on the insulator layer and intended to form at least one part of a first electrode of the MIM type structure
Implementation Method 3
making the first gold and/or copper layer integral with a second substrate such that the first gold and/or copper layer is arranged between the insulator layer and the second substrate
Data Source
AI summary
A method for producing a metal-insulator-metal (MIM) type structure is provided, including producing, on a first substrate, first and second separation layers arranged one against the other; producing, on the second separation layer, an insulator layer including a perovskite structure material; producing a first gold and/or copper layer on the insulator layer, forming at least one part of a first electrode; making the first gold and/or copper layer integral with a second substrate; and forming a mechanical separation at an interface between the first and the second separation layers, the first separation layer remaining integral with the first substrate and the second separation layer remaining integral with the insulator layer, the insulator layer being arranged between the first electrode and a second electrode including at least one metal layer.