Mixed-Shape Through Vias for Signal and Power Optimization

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Solution Overview

Problem

Existing semiconductor devices face challenges in optimizing signal transmission and power distribution due to parasitic capacitance and resistance in through vias, which affect performance, integration density, and operating speed.

Innovation Solution

The semiconductor device incorporates through vias of varying shapes, including pillar and tube structures, to minimize parasitic capacitance and resistance, with pillar vias for signal transmission and tube vias for power distribution, enhancing electrical interconnections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If through vias are used to transfer signals and power between integrated circuits, then connectivity and integration density are improved, but parasitic capacitance and resistance increase, degrading signal transmission performance

Engineering Contradiction:
Improveintegration densityVSAvoidsignal transmission performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies different via shapes (pillar vs. tube) for different functional requirements: pillar vias for data signals requiring low capacitance, and tube vias for power delivery requiring low resistance. This local differentiation optimizes performance for each specific application while maintaining high integration density.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the via population into different types (pillar and tube) based on their electrical characteristics and functional requirements. This segmentation allows simultaneous optimization of signal transmission and power delivery paths, resolving the contradiction between connectivity density and transmission performance.

Inventive Principle:
Principle #1Segmentation

2Reliability

If pillar-shaped through vias are used, then parasitic capacitance is reduced for data signal transmission, but power delivery efficiency is limited compared to tube-shaped vias

Engineering Contradiction:
Improvedata signal transmissionVSAvoidpower delivery efficiency
Core Design Contradiction:
ReliabilityVSPower

Solution Approach 1:

The patent assigns pillar-shaped vias specifically to data signal paths where low capacitance is critical, while assigning tube-shaped vias to power delivery paths where low resistance is critical. This local quality differentiation resolves the trade-off between signal transmission and power delivery efficiency.

Inventive Principle:
Principle #3Local quality

3Power

If tube-shaped through vias are used, then power delivery efficiency is improved due to lower resistance, but parasitic capacitance increases affecting data signal transmission

Engineering Contradiction:
Improvepower delivery efficiencyVSAvoiddata signal transmission
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent restricts tube-shaped vias to power delivery applications where their low resistance characteristic is advantageous, while avoiding their use in data signal paths where capacitance would be problematic. This targeted application resolves the contradiction between power efficiency and signal integrity.

Inventive Principle:
Principle #3Local quality

4Reliability

If multiple via shapes are implemented, then optimization for both data and power is achieved, but manufacturing complexity increases

Engineering Contradiction:
Improveoverall device performanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the via formation process into distinct steps for pillar and tube vias, using different etching and filling methodologies. While this increases manufacturing complexity, it enables simultaneous optimization of both data and power paths, achieving superior overall device performance.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12622253B2Semiconductor device with through vias of various shapes and method of manufacturing the same
Publication Date: 2026.05.05 SK HYNIX INC
  • US12622253B2 patent drawing
  • US12622253B2 patent drawing
  • US12622253B2 patent drawing

AI summary

A semiconductor device is provided with differently-shaped conductive through-vias, having different-shape horizontal cross-sections. The cross-sectional shapes of the via include but are not limited to circular and ring shaped, which are cross sections that correspond to vias that are pillar shaped and tube-shaped respectively.