Multi-Level Cell Programming Shadow-Sequence for NAND Flash Coupling

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Solution Overview

Problem

As integration density of NAND flash memory arrays increases, adverse coupling effects during programming of multi-level cells (MLC) become significant, particularly word line coupling, which affects the programming of adjacent cells.

Innovation Solution

A method of programming MLC in a non-volatile memory device that involves shadow-programming followed by main-programming, where MLC are grouped and programmed in a specific sequence to reduce or prevent bit-line and word line coupling by adjusting threshold voltage distributions, using techniques like incremental pulse programming.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional programming methods are used for MLC in high-density NAND flash memory arrays, then programming speed is maintained, but adverse coupling effects (word line coupling and bit-line coupling) significantly affect adjacent MLC

Engineering Contradiction:
Improveprogramming accuracyVSAvoidcoupling effects
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The programming operation is segmented into multiple phases: pre-programming phase where MLC are programmed to intermediate states, and main programming phase where final states are achieved. This segmentation allows coupling effects to be managed across different programming stages, improving accuracy while maintaining speed.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies preliminary action by performing pre-programming of MLC to intermediate states before the main programming operation. This preliminary programming establishes a baseline state that reduces the impact of coupling effects during the subsequent main programming phase, thereby improving programming accuracy.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If integration density of NAND flash memory arrays is increased, then device size and power consumption are reduced, but coupling effects during programming become more significant

Engineering Contradiction:
Improveintegration densityVSAvoidcoupling effects
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent applies local quality by differentiating programming operations for MLC based on their positional relationships. MLC are categorized into first MLC (with first neighboring MLC) and second MLC (with second neighboring MLC), and different programming sequences and methods are applied to each group to manage coupling effects locally.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The MLC array is segmented into different groups based on their coupling relationships. The programming operation is divided into sequential steps that first handle pre-programming of specific groups, then proceed to main programming. This segmentation allows the system to maintain high integration density while managing the increased coupling effects through structured programming sequences.

Inventive Principle:
Principle #1Segmentation

3Ease of operation

If word line coupling is addressed through conventional programming, then programming operation is simple, but threshold voltage distributions of adjacent MLC are adversely affected

Engineering Contradiction:
Improveprogramming operationVSAvoidthreshold voltage distribution
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The programming operation is segmented into pre-programming and main programming phases. During pre-programming, MLC are programmed to intermediate states with controlled threshold voltage changes. During main programming, final states are achieved with reduced coupling effects. This segmentation maintains operational simplicity while improving threshold voltage distribution precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies preliminary action by performing pre-programming to intermediate states before main programming. This preliminary step establishes a foundation that reduces the impact of word line coupling on threshold voltage distributions during the subsequent main programming phase, thereby improving manufacturing precision without significantly complicating the overall operation.

Inventive Principle:
Principle #10Preliminary action

4Reliability

If programming sequence is optimized to reduce coupling, then programming accuracy is improved, but programming time increases

Engineering Contradiction:
Improveprogramming accuracyVSAvoidprogramming time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The programming operation is segmented into pre-programming and main programming phases, with specific sequences for first MLC and second MLC. By organizing the programming sequence this way, the patent achieves improved accuracy through better coupling management while minimizing time overhead through efficient phase transitions and parallel processing capabilities.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces or prevents adverse coupling between adjacent MLC, improving the accuracy and efficiency of programming by minimizing the impact of threshold voltage changes during most significant bit (MSB) and least significant bit (LSB) programming.

Implementation Method 1

The channel of the string selection transistor is boosted to a voltage equal to the power voltage less a threshold voltage of the string selection transistor. As a result, the string selection transistors coupled to the non-selected cells are turned OFF. The selected cells are programmed by Fowler-Nordheim tunneling between the floating gates and respective channels.

Methodology Applied
Scientific EffectFowler-Nordheim tunneling:

Data Source

PatentUS8879320B2Method of programming multi-level cells in non-volatile memory device
Publication Date: 2014.11.04 SAMSUNG ELECTRONICS CO LTD
  • US8879320B2 patent drawing
  • US8879320B2 patent drawing
  • US8879320B2 patent drawing

AI summary

A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.