Multilayer Ceramic Capacitor Silicon Gradient for Moisture Resistance

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Solution Overview

Problem

There is a demand for multilayer ceramic capacitors with improved moisture resistance reliability, particularly at the boundaries between different lamination configurations.

Innovation Solution

The multilayer ceramic capacitor design includes specific silicon concentration gradients in the ceramic dielectrics, with varying silicon content in the outer and side margin portions relative to the inner layer portions, enhancing moisture resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the capacitor uses portions with different lamination configurations (inner electrode layers and dielectric layers only), then the device complexity is reduced and manufacturing is simplified, but the moisture resistance reliability at the boundaries deteriorates

Engineering Contradiction:
Improvelamination configuration complexityVSAvoidmoisture resistance reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent applies local quality by making the dielectric layers have different silicon concentrations in different regions: the first dielectric layers have a first silicon concentration while the second dielectric layers have a second silicon concentration that is higher than the first. This local compositional variation enhances moisture resistance at the boundaries between different lamination configurations without requiring complex structural changes throughout the entire device.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the chemical composition parameter of the dielectric layers by varying the silicon concentration. The first dielectric layers contain silicon at a first concentration, while the second dielectric layers contain silicon at a higher second concentration. This parameter change improves moisture resistance reliability at the boundaries between different lamination portions while maintaining the simplified lamination structure.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the silicon concentration in dielectric layers is increased to improve moisture resistance, then the manufacturing precision and material uniformity may deteriorate

Engineering Contradiction:
Improvemoisture resistance reliabilityVSAvoidsilicon concentration uniformity
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent segments the dielectric layers into two distinct types: first dielectric layers with a first silicon concentration and second dielectric layers with a second silicon concentration. This segmentation allows precise control over silicon distribution, enabling improved moisture resistance at boundaries while maintaining manufacturing precision through controlled, discrete compositional variations rather than continuous gradients that would be difficult to control.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by concentrating the higher silicon content specifically in the second dielectric layers at the boundaries between different lamination configurations, while the first dielectric layers maintain a lower silicon concentration. This localized compositional optimization improves moisture resistance where it is most needed without requiring uniform high silicon content throughout the entire device, thereby maintaining manufacturing precision.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20250336612A1Multilayer ceramic capacitor
Publication Date: 2025.10.30 MURATA MFG CO LTD
  • US20250336612A1 patent drawing
  • US20250336612A1 patent drawing
  • US20250336612A1 patent drawing

AI summary

A multilayer ceramic capacitor has a difference between a first silicon concentration at an outer layer position and a first silicon concentration at a side margin position is greater than or equal to about 0.2 mol % and less than or equal to about 2.5 mol %, and a first silicon concentration at an origin is greater than or equal to the first silicon concentration at the outer layer position and less than or equal to the first silicon concentration at the side margin position, or the first silicon concentration at the origin is less than or equal to the first silicon concentration at the outer layer position and greater than or equal to the first silicon concentration at the side margin position.