Modular Ion Implantation System for Large Substrates
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Solution Overview
Problem
Current ion implantation systems face challenges in efficiently implanting ions into large substrates while maintaining cost-effectiveness and ensuring uniform ion distribution, particularly in manufacturing thin film transistors for display apparatuses.
Innovation Solution
The system employs multiple ion implantation assemblies arranged in a line, with a transfer assembly that moves the substrate through different paths to allow ions to be implanted from both upper and lower portions simultaneously, using ion supply units, mass spectrometers, and ion beam deflection units to achieve precise and uniform ion distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a single ion implantation assembly is used for large substrates, then the substrate size coverage is limited, but the device complexity is reduced
Solution Approach 1:
The ion implantation system is divided into multiple independent ion implantation assemblies (first, second, third, and fourth assemblies) arranged in a line. Each assembly can independently implant ions into different regions of the substrate, allowing the system to cover large substrate areas while maintaining manageable complexity through modular design.
Solution Approach 2:
The ion implantation assemblies are arranged not only in the horizontal direction but also extend in the vertical direction, creating a two-dimensional array configuration. This spatial arrangement allows comprehensive coverage of large substrates by utilizing multiple dimensions rather than simply expanding in one direction.
2Manufacturing precision
If ions are implanted from only one direction, then the implantation process is simplified, but ion uniformity across the substrate is reduced
Solution Approach 1:
The ion implantation assemblies are positioned at different locations and angles relative to the substrate. The first and second assemblies implant ions from one direction while the third and fourth assemblies implant ions from another direction, creating an asymmetric arrangement that ensures uniform ion distribution across the entire substrate surface.
Solution Approach 2:
Each ion implantation assembly is positioned to target specific regions of the substrate with optimized ion flux. By distributing multiple assemblies across different locations, the system provides locally optimized ion implantation that collectively achieves uniform overall distribution across the large substrate area.
3Productivity
If multiple ion implantation assemblies are used, then ion implantation efficiency is improved, but the manufacturing cost increases
Solution Approach 1:
The system uses multiple standardized ion implantation assemblies that can be manufactured using the same design and components. This segmentation into identical modular units allows for economies of scale in manufacturing, reducing the per-unit cost despite the increased number of assemblies.
Solution Approach 2:
Each ion implantation assembly is designed as a universal module capable of implanting ions into different substrate regions. This multi-functionality allows a single assembly design to serve multiple purposes, reducing overall system cost by eliminating the need for specialized components for each assembly.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient ion implantation into large substrates, reducing manufacturing costs and improving ion uniformity, thereby enhancing the performance of thin film transistors in display apparatuses.
Implementation Method 1
The ion source unit ionizes gases into a plasma state to generate ions for implantation into a substrate or a wafer
Implementation Method 2
The ion source unit ionizes gases into a plasma state to generate ions for implantation into a substrate or a wafer
Implementation Method 3
The ions generated by the ion source unit are accelerated by the electrode units. If a predetermined voltage is applied to the electrode units, the ions emitted from the ion source unit are accelerated, and proceed toward and are implanted into the substrate
Implementation Method 4
each of the plurality of ion implantation assemblies implants ions into a partial region of the substrate
Data Source
AI summary
According to the present invention, an ion implantation system capable of implanting ions into a large substrate and reducing a manufacturing cost, and an ion implantation method using the same may be provided. The ion implantation system includes a plurality of ion implantation assemblies arranged in a line, each ion implantation assembly to implant ions into a partial region of the substrate. This allows for a compact ion implantation system to implant ions into a very large substrate. The substrate moves through the ion implantation system in a first direction, turns around, and then moves back through the ion implantation system in a second and opposite direction, where ions are implanted into the substrate while the substrate is moving in both directions. The path in the first direction can be spaced-apart from the path in the second direction to allow for two substrates to be processed simultaneously.