MOF Dielectric BEOL Structure for Lower RC Delay
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Solution Overview
Problem
The RC delay in semiconductor structures, primarily caused by high dielectric constants of etch stop layers and insulating materials in the BEOL structure, hinders signal propagation and overall performance.
Innovation Solution
Integration of a metal-organic framework (MOF) material with ultra-low dielectric constant as a metal-ion-containing dielectric layer in the BEOL structure, replacing traditional silicon-based etch stop layers and insulating materials, thereby reducing capacitance and maintaining mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional silicon-based etch stop layers and insulating materials are used in the BEOL structure, then mechanical strength and structural integrity are maintained, but the dielectric constant remains high causing increased capacitance and RC delay
Solution Approach 1:
The patent changes the dielectric parameter by introducing MOF materials with ultra-low dielectric constants (k < 2.0) to replace traditional silicon-based materials. This parameter change directly reduces capacitance between interconnects, thereby reducing RC delay and improving signal propagation speed while maintaining the structural function of the dielectric layer
Solution Approach 2:
The patent employs composite materials by integrating MOF materials with organic linkers and metal ions into the BEOL structure. These composite materials achieve both the desired ultra-low dielectric constant for reduced RC delay and sufficient mechanical strength to maintain structural integrity, resolving the contradiction between performance improvement and structural maintenance
2Speed
If low-k dielectric materials are used to reduce capacitance, then signal speed improves, but mechanical strength may be compromised
Solution Approach 1:
The patent uses composite MOF materials that combine organic linkers with metal ions to create a structure that simultaneously achieves ultra-low dielectric constant (k < 2.0) for high signal speed and sufficient mechanical strength. The composite structure provides both the low-k property needed for speed and the structural integrity needed for strength
Solution Approach 2:
The patent applies local quality by positioning the ultra-low-k MOF material specifically in regions where capacitance reduction is most critical (between closely spaced interconnects), while maintaining appropriate material properties in other regions to ensure overall mechanical strength and structural support
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a plurality of metal layers, a metal-ion-containing dielectric layer over at least one of the metal layers, and a conductive via laterally surrounded by the metal-ion-containing dielectric layer. A method of manufacturing a semiconductor structure is also provided.