MOF Interlayer Insulation Structure for Low-Capacitance 3D Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices with a three-dimensional stack structure, reducing the thickness of interlayer insulation layers to increase integration leads to increased parasitic capacitance and signal interference between memory cells, hindering reliable signal processing.
Innovation Solution
Incorporating a metal-organic framework layer as the interlayer insulation structure, which has a low dielectric constant and porous structure, to reduce parasitic capacitance and signal interference by forming a thin film with a two-dimensional or three-dimensional network of metal and organic ligands, thereby enhancing integration and signal reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the interlayer insulation layer is reduced to increase the degree of integration, then the integration density is improved, but parasitic capacitance between neighboring memory cells increases
Solution Approach 1:
The patent employs a metal-organic framework (MOF) material with a porous structure as the interlayer insulation layer. The porous nature of the MOF material provides low dielectric constant properties, which effectively reduce parasitic capacitance between adjacent memory cells even when the layer thickness is reduced for higher integration density.
Solution Approach 2:
The patent uses a composite metal-organic framework material combining metallic nodes and organic linkers to create an interlayer insulation structure with tailored dielectric properties. This composite material approach enables simultaneous achievement of thin film thickness for high integration and low parasitic capacitance through the unique molecular structure of the MOF.
2Quantity of substance
If the thickness of the interlayer insulation layer is reduced to increase the degree of integration, then the integration density is improved, but signal interference between neighboring memory cells increases
Solution Approach 1:
The porous metal-organic framework structure provides effective electrical isolation between adjacent memory cells, preventing signal interference while maintaining the reduced thickness required for high integration density. The low dielectric constant of the porous structure minimizes capacitive coupling between neighboring cells.
Solution Approach 2:
The patent applies the metal-organic framework material specifically in the interlayer insulation regions where signal isolation is critical, while other portions of the device structure may use different materials optimized for their specific functions. This localized application of MOF material addresses signal interference at the critical interfaces between memory cells.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal-organic framework layer effectively reduces parasitic capacitance and signal interference, allowing for improved integration of memory cells and reliable signal processing by minimizing fringing electric fields and maintaining structural stability with a low dielectric constant.
Implementation Method 1
The interlayer insulation structure may include a metal-organic framework layer... effectively reduces parasitic capacitance and signal interference... by minimizing fringing electric fields and maintaining structural stability with a low dielectric constant
Data Source
AI summary
A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate structure disposed over the substrate, a dielectric structure disposed to contact a sidewall surface of the gate structure over the substrate, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. The gate structure includes a gate electrode layer and an interlayer insulation structure which are alternately stacked. The interlayer insulation structure includes a metal-organic framework layer.