Molded bridge with vertical interconnects and method of making the same
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in producing smaller, higher-density devices with efficient electrical interconnections, particularly in integrating multiple semiconductor die within a single package, which often require expensive through silicon vias (TSVs) and specialized substrates.
Innovation Solution
The development of a fully molded bridge interposer with vertical interconnects and redistribution layers (RDLs) that eliminates the need for TSVs, utilizing unit-specific patterning and build-up interconnect structures to achieve high-density connections and alignment, allowing for cost-effective integration of semiconductor die with improved electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through silicon vias (TSVs) and specialized substrates are used to integrate multiple semiconductor die, then electrical interconnection reliability is improved, but manufacturing cost increases and device complexity increases
Solution Approach 1:
The patent replaces expensive TSVs and specialized substrates with a molded bridge interposer structure that uses standard semiconductor fabrication processes. The interposer is formed using conventional dielectric layers, conductive traces, and planarization techniques that are already established in the industry, eliminating the need for costly TSV formation and specialized substrate materials.
Solution Approach 2:
The patent changes the structural parameters of the interconnection system by transitioning from vertical TSV holes through silicon to a planar molded bridge structure with conductive traces embedded in dielectric layers. This parameter change enables the use of standard fabrication processes while achieving the same electrical interconnection function.
2Quantity of substance
If through silicon vias (TSVs) are used for vertical interconnections, then electrical connection density is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent segments the interconnection function into multiple planar layers rather than requiring deep vertical holes. The molded bridge interposer contains multiple dielectric layers with conductive traces at different levels, allowing electrical connections to be distributed across multiple planes, achieving high connection density through lateral rather than vertical integration.
Solution Approach 2:
The patent transitions from one-dimensional vertical interconnections (TSVs) to two-dimensional planar interconnections with multiple conductive layers. This dimensional change allows for higher connection density by utilizing lateral routing and multiple stacking levels, avoiding the complexity of deep vertical hole formation and filling.
3Area of moving object
If smaller semiconductor devices are produced with higher component density, then device footprint is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent incorporates alignment features and reference marks during the early stages of interposer fabrication. The molded bridge structure includes built-in alignment mechanisms that guide subsequent die attachment processes, ensuring precise positioning even as device footprints shrink and component density increases.
Solution Approach 2:
The patent applies different local properties to different regions of the interposer, including specialized dielectric materials with controlled shrinkage characteristics in critical alignment areas. This local quality enhancement ensures that manufacturing precision is maintained in key regions while allowing overall device footprint to be reduced.
Data Source
AI summary
An electronic assembly with a molded bridge, vertical interconnects and encapsulant disposed around vertical interconnects. A first build-up interconnect structure disposed over the encapsulant and the vertical interconnects, through conductive interconnects disposed in a periphery of the molded bridge, a second encapsulant disposed over the molded bridge and around the through conductive interconnects. A second build-up interconnect structure disposed over the molded bridge, the second encapsulant, and the through conductive interconnects. To make the assembly, a first encapsulant is disposed around and over vertical interconnects disposed over a carrier, a first build-up interconnect structure is formed over the first encapsulant and the vertical interconnects, and through conductive interconnects are disposed in a periphery of the vertical interconnects. A second encapsulant is disposed over the first encapsulant, the vertical interconnects and through conductive interconnects to form a molded base, and a second build-up interconnect structure is formed over the molded base.