Molybdenum Allyl Complexes for CVD and ALD Thin Film Deposition
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Solution Overview
Problem
Current molybdenum precursors for CVD and ALD lack the necessary thermal stability, volatility, and deposition rates required for the fabrication of next-generation semiconductor devices.
Innovation Solution
The development of organometallic complexes, specifically those corresponding to Formulas I and II, which provide improved thermal stability and increased vapor pressures, enabling the formation of molybdenum-containing films with enhanced properties through CVD and ALD processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional molybdenum precursors are used for CVD and ALD, then the deposition process can be performed, but the thermal stability and vapor pressure are insufficient for next-generation semiconductor devices
Solution Approach 1:
The patent modifies the molecular structure of molybdenum precursors by changing chemical parameters (introducing specific ligands, adjusting oxidation states) to simultaneously improve thermal stability and increase vapor pressure, enabling both reliable film formation and high deposition rates for next-generation semiconductor devices
Solution Approach 2:
The invention uses composite organometallic complexes combining molybdenum with specific organic ligands and auxiliary groups to create precursors that exhibit enhanced thermal stability and vapor pressure characteristics, resolving the contradiction between reliability and productivity
2Productivity
If conventional precursors are used, then the deposition process is simple, but the vapor pressure is too low for efficient deposition
Solution Approach 1:
The patent systematically adjusts molecular parameters of the precursors (ligand types, steric effects, electronic properties) to optimize vapor pressure while maintaining manageable structural complexity, achieving efficient deposition without excessive complexity
3Reliability
If conventional precursors are used, then the synthesis yield is moderate, but the thermal stability is insufficient
Solution Approach 1:
The invention optimizes synthesis parameters and precursor structure to achieve high thermal stability and high synthesis yield simultaneously, ensuring both reliable film properties and efficient production for next-generation semiconductor manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These complexes allow for the deposition of molybdenum-containing films with controlled physical properties, increased stability, and high yield synthesis, addressing the limitations of existing precursors by offering improved thermal stability and deposition rates.
Implementation Method 1
CVD is a chemical process whereby precursors are used to form a thin film on a substrate. In a typical CVD process, the precursors are passed over a substrate (e.g., a wafer) in a low pressure or ambient pressure reaction chamber. The precursors react and/or decompose on the substrate surface creating a thin film of deposited material.
Implementation Method 2
ALD is also a method for the deposition of thin films. It is a self-limiting, sequential, unique film growth technique based on surface reactions that can provide precise thickness control and deposit conformal thin films of materials provided by precursors onto substrates of varying compositions.
Implementation Method 3
The development of organometallic complexes, specifically those corresponding to Formulas I and II, which provide improved thermal stability and increased vapor pressures, enabling the formation of molybdenum-containing films with enhanced properties
Data Source
AI summary
Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I) and Formula (II), wherein R1, R3, R5, R7, R8 and R10 are independently and at each occurrence alkyl; R2, R6 and R9 are independently alkyl; R4 and R11 are independently and at each occurrence selected from the group consisting of alkyl, alkenyl, and alkynyl; x, z, a, c, d and f are independently zero, 1, or 2; y, b and e are independently zero or 1; and n and m are independently zero to 5.