Molybdenum Polishing Composition for High Removal Rate
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Solution Overview
Problem
Current methods for polishing molybdenum surfaces suffer from low removal rates and high static etch rates, which are not effectively addressed in existing compositions and processes.
Innovation Solution
A molybdenum polishing composition comprising an abrasive, a first molybdenum static etch rate suppressor, a second molybdenum static etch rate suppressor, a first oxidizer, and a second oxidizer, with a pH of 4 to 9, is developed to achieve a high removal rate while minimizing static etch rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing compositions are used on molybdenum surfaces, then the polishing process can proceed, but the removal rate is low and the static etch rate is high
Solution Approach 1:
The patent applies parameter changes by carefully controlling the pH of the polishing composition within a specific range (4-9) and by selecting oxidizers with appropriate standard reduction potentials. This optimization of chemical parameters enables the composition to achieve a high removal rate (at least 300 Å/min) while maintaining a low static etch rate (100 Å/min or less), thereby resolving the technical contradiction between productivity and harmful effects.
Solution Approach 2:
The patent employs a composite polishing composition containing multiple components working synergistically: an abrasive for mechanical removal, oxidizers (such as potassium iodate and hydrogen peroxide) for chemical oxidation, and static etch rate suppressors. This composite formulation allows the composition to simultaneously achieve high removal rate and low static etch rate, which cannot be accomplished with single-component systems.
2Productivity
If the removal rate is increased, then productivity improves, but the static etch rate tends to increase as well
Solution Approach 1:
The patent resolves this contradiction by optimizing chemical parameters including pH (4-9) and the selection of oxidizers with specific standard reduction potentials. These parameter optimizations enable the polishing process to achieve high removal rates (at least 300 Å/min) while maintaining low static etch rates (100 Å/min or less), thus improving productivity without sacrificing surface quality.
Solution Approach 2:
The patent introduces static etch rate suppressors as intermediary substances that mediate between the abrasive/oxidizer system and the molybdenum surface. These suppressors selectively inhibit etching while allowing controlled removal, acting as a buffer that enables high productivity while preserving manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a molybdenum removal rate of at least 300 Å/min with a low static etch rate of 100 Å/min or less, resulting in a high removal-to-etch rate ratio of 5 or greater.
Implementation Method 1
an abrasive; wherein the polishing composition has a pH of 4 to 9
Implementation Method 2
a first oxidizer; and a second oxidizer
Implementation Method 3
a first molybdenum static etch rate suppressor; a second molybdenum static etch rate suppressor
Data Source
AI summary
Molybdenum polishing compositions and methods according to the present disclosure include abrasive particles, a first and a second oxidizers, and a first and a second molybdenum static etch rate suppressors, wherein the pH of the polishing composition is from 4 to 9. Compositions according to the present disclosure are effective to efficiently polish molybdenum at a high removal rate, which achieving a low molybdenum static etch rate, thereby obtaining a high Mo RR/SER ratio. Compositions and methods according to the present disclosure thus result in improved molybdenum polishing processes and higher-quality molybdenum surfaces than are achieved by conventional polishing compositions.