Other Chemical Processes TRIZ Cases

Low-molecular-weight HEC with surfactant keeps CMP slurry filterable after dilution, enabling finer POU filtration and fewer surface defects.

Azeotropic HF mixtures enable distillation-based recovery of unreacted hydrogen fluoride, cutting waste and separation cost in HFC-143 production.

Ceria particles with cationic polymer and quaternary salt raise SiN and polysilicon removal while protecting silicon oxide during CMP.

A zwitterion, peroxide, and controlled silica abrasive raise TEOS, Ta, and Cu removal rates while keeping CMP slurry stable and scratch-resistant.

Composite abrasive grains with multivalent metal compounds raise insulating-material polishing rates for faster 3D-NAND surface flattening.

Composite cerium abrasive grains raise carbon-containing silicon oxide polishing rate while lowering minute scratch risk in semiconductor CMP.

A low-pH titanium oxide CMP slurry boosts boron-doped polysilicon and TiN removal while protecting silicon oxide and silicon nitride.

Porous oxide abrasives filled with Ce(OH)4 expand contact area in CMP slurry, raising polishing amount while improving productivity and cost.

Non-stoichiometric SiOx in a fluoropolymer adsorbs oxygen in sealed spaces while improving crosslinked product heat and plasma resistance.

A vapor-permeable polymer matrix supports salt swelling during sorption cycles, enabling reversible water uptake without liquid weeping.

Porous activated carbon in the tire cavity adsorbs air molecules to increase effective air volume, easing stiffness and cavity noise.

Positive-zeta silica and an anionic cyclic additive raise silicon nitride CMP rate while matching silicon oxide removal and limiting defects.

A sorbent captures lithium ions from battery shredding fluid, enabling recovery despite foreign substances and avoiding loss in discarded fluid.

Li-exchanged zeolite particles with Li3PO4 remove trace water, H+ and HF from liquid electrolyte to protect battery life and cycle performance.

A fluorene compound adsorbs on cellulose nanofibers to improve rubber compatibility, dispersion, strength, elongation, and hardness.

Amino acids and anionic inhibitors help CMP slurries polish tungsten and molybdenum at high removal rates while limiting corrosion and etching.

Ceria-coated abrasives and dual additives tune oxide and SiN removal rates while reducing trench dishing in STI CMP.

Cationic silica and polymer additives enable stable silicon nitride CMP with high selectivity, fewer defects, and concentrated slurry handling.

Anionic colloidal silica, surfactant, and controlled pH improve SiN:TEOS selectivity while limiting TEOS dishing in CMP.

An epoxy-oxetane encapsulating composition with a moisture adsorbent forms a thin inkjet barrier that blocks oxygen and moisture in OLEDs.

A bimodal colloidal silica CMP slurry with partially hydrolyzed PVA keeps pad grooves open, sustaining slurry flow and polishing uniformity.

A CMP slurry with abrasives and polymer removal enhancers boosts polymer removal on packaging substrates while limiting defects and corrosion.

A selective CMP slurry boosts oxide removal while inhibiting nitride polishing to flatten display insulation layers and reduce residual defects.

Cubiform ceria and a low-charge cationic polymer raise silicon oxide removal while improving polysilicon selectivity and limiting dishing.

Micron-size PU beads in Cu and TSV CMP slurry replace pad asperities, cutting pad waste while improving removal rate and wafer topography.

A multi-valence cerium slurry raises insulating material CMP rate by using a controlled low-valence ratio to boost surface removal.

Ceria abrasives shift CMP from mechanical dominance toward chemical selectivity, reducing transition metal oxide loss and improving stop-layer control.

A squarylium dye filter blocks long-wavelength near-infrared light while preserving visible transmission for better imaging color reproducibility.

Composite abrasive grains with multivalent metal compounds raise CMP removal rates for insulating films while preserving polishing consistency.

Water droplets are removed in a separate coolant storage unit, preserving insulating performance without adding flow resistance or pump load.

A two-step silica and phosphoric-group slurry boosts gallium substrate removal rate while reducing surface roughening and improving finish.

A silicon-based treatment liquid speeds raw-material dissolution and forms water-repellent films that prevent semiconductor pattern collapse during drying.

Triazole and triazolium polymer additives passivate tungsten and disperse abrasives to cut CMP dishing and erosion without losing selectivity.

A hindered phenolic antioxidant helps epoxy underfill resist aerobic thermal degradation, reducing fillet cracks while preserving storage stability.

A TMAH-free polysilicon CMP slurry uses silica, amino acids or guanidine derivatives, and alkali salts to keep removal rate and oxide/nitride selectivity.

A ceria-based STI CMP slurry uses polyhydroxy compounds, polyacrylate, and PEG to cut oxide trench dishing while preserving oxide selectivity.

An alkaline cerium-oxide slurry with ammonium salts boosts copper CMP removal by promoting copper complex formation during polishing.

A glycerol-based CMP composition balances fast copper wiring removal with dishing prevention through controlled etching, wettability, and surface protection.

A glass-fiber-reinforced PBT gasket resists melting and deformation, helping cylindrical secondary batteries avoid terminal short circuits.

Surface-modified anionic silica and iron chemistry raise tungsten removal rates while reducing edge-over-erosion in CMP.

Coated inorganic emission particles and covalent encapsulation block FRET, raising color conversion efficiency and heat resistance.

A permanganate-aluminum salt CMP slurry raises removal rate for hard materials while limiting pad heating and improving storage stability.

High inorganic filler loading in a sealing resin cuts wafer warpage while balancing thermal expansion and elastic modulus in packaging.

Micron polyurethane beads in copper barrier CMP slurry renew pad asperities, extending pad and conditioner life while keeping removal rates stable.

A rigid polymer bracket overmolded with an elastomer seal supports window-mounted sensors while blocking debris and reducing NVH.

Negative-zeta abrasives and a cationic surfactant raise silicon nitride removal rate while limiting scratches in semiconductor polishing.

Crosslinked polyisobutylene sealant improves puncture sealing without tire imbalance, off-gassing, or higher rolling resistance.

Crosslinked polyorganosiloxane binder stabilizes porous sorbent coatings on heat exchangers, resolving thermal conductivity and mechanical stability trade-offs.

Hydrosilylation of polyether and organosilicon compounds creates a copolymer that improves cure speed and heat stability while reducing side reactions.

A polishing composition uses permanganate and aluminum salts to remove material from silicon carbide substrates.

Alkoxysilyl hydrogenated block copolymer resists moisture transmission while maintaining transparency.

A pliable rock salt sheet binds melting compound particles with a water-soluble adhesive to ensure uniform coverage and eliminate messy residue.

Mixing cellulose with cold alkaline solution creates a dispersion that coagulates into porous beads, avoiding toxic solvents and complex heating steps.

A chitosan-biochar composite fiber adsorbs phosphorus from aqueous solutions through synergistic binding sites.

Composite silicone and polypropylene glycol formulation suppresses foam in gas sweetening processes, maintaining purification efficiency.

A polishing composition uses a cellulose derivative and vinyl alcohol-based dispersant to improve surface finish quality.

A polymeric precursor composition enables rapid photo-polymerization of transparent moisture sorbers for sensitive electronics.

Manganese oxide particles and permanganate ions enable high-speed polishing of silicon carbide and gallium nitride substrates.

Horizontal centrifugation eliminates massive particles to reduce scratches while maintaining polishing speed.