Other Chemical Processes TRIZ Cases

Low-molecular-weight HEC with surfactant keeps CMP slurry filterable after dilution, enabling finer POU filtration and fewer surface defects.

Azeotropic HF mixtures enable distillation-based recovery of unreacted hydrogen fluoride, cutting waste and separation cost in HFC-143 production.

Ceria particles with cationic polymer and quaternary salt raise SiN and polysilicon removal while protecting silicon oxide during CMP.

A zwitterion, peroxide, and controlled silica abrasive raise TEOS, Ta, and Cu removal rates while keeping CMP slurry stable and scratch-resistant.

Composite abrasive grains with multivalent metal compounds raise insulating-material polishing rates for faster 3D-NAND surface flattening.

Composite cerium abrasive grains raise carbon-containing silicon oxide polishing rate while lowering minute scratch risk in semiconductor CMP.

A low-pH titanium oxide CMP slurry boosts boron-doped polysilicon and TiN removal while protecting silicon oxide and silicon nitride.

Porous oxide abrasives filled with Ce(OH)4 expand contact area in CMP slurry, raising polishing amount while improving productivity and cost.

Non-stoichiometric SiOx in a fluoropolymer adsorbs oxygen in sealed spaces while improving crosslinked product heat and plasma resistance.

A vapor-permeable polymer matrix supports salt swelling during sorption cycles, enabling reversible water uptake without liquid weeping.

Porous activated carbon in the tire cavity adsorbs air molecules to increase effective air volume, easing stiffness and cavity noise.

Positive-zeta silica and an anionic cyclic additive raise silicon nitride CMP rate while matching silicon oxide removal and limiting defects.

A sorbent captures lithium ions from battery shredding fluid, enabling recovery despite foreign substances and avoiding loss in discarded fluid.

Li-exchanged zeolite particles with Li3PO4 remove trace water, H+ and HF from liquid electrolyte to protect battery life and cycle performance.

A fluorene compound adsorbs on cellulose nanofibers to improve rubber compatibility, dispersion, strength, elongation, and hardness.

Amino acids and anionic inhibitors help CMP slurries polish tungsten and molybdenum at high removal rates while limiting corrosion and etching.

Ceria-coated abrasives and dual additives tune oxide and SiN removal rates while reducing trench dishing in STI CMP.

Cationic silica and polymer additives enable stable silicon nitride CMP with high selectivity, fewer defects, and concentrated slurry handling.

Anionic colloidal silica, surfactant, and controlled pH improve SiN:TEOS selectivity while limiting TEOS dishing in CMP.

An epoxy-oxetane encapsulating composition with a moisture adsorbent forms a thin inkjet barrier that blocks oxygen and moisture in OLEDs.

A bimodal colloidal silica CMP slurry with partially hydrolyzed PVA keeps pad grooves open, sustaining slurry flow and polishing uniformity.

A CMP slurry with abrasives and polymer removal enhancers boosts polymer removal on packaging substrates while limiting defects and corrosion.

A selective CMP slurry boosts oxide removal while inhibiting nitride polishing to flatten display insulation layers and reduce residual defects.

Cubiform ceria and a low-charge cationic polymer raise silicon oxide removal while improving polysilicon selectivity and limiting dishing.

Micron-size PU beads in Cu and TSV CMP slurry replace pad asperities, cutting pad waste while improving removal rate and wafer topography.

A multi-valence cerium slurry raises insulating material CMP rate by using a controlled low-valence ratio to boost surface removal.

Ceria abrasives shift CMP from mechanical dominance toward chemical selectivity, reducing transition metal oxide loss and improving stop-layer control.

A squarylium dye filter blocks long-wavelength near-infrared light while preserving visible transmission for better imaging color reproducibility.

Composite abrasive grains with multivalent metal compounds raise CMP removal rates for insulating films while preserving polishing consistency.

Water droplets are removed in a separate coolant storage unit, preserving insulating performance without adding flow resistance or pump load.

A two-step silica and phosphoric-group slurry boosts gallium substrate removal rate while reducing surface roughening and improving finish.

A silicon-based treatment liquid speeds raw-material dissolution and forms water-repellent films that prevent semiconductor pattern collapse during drying.

Triazole and triazolium polymer additives passivate tungsten and disperse abrasives to cut CMP dishing and erosion without losing selectivity.

A hindered phenolic antioxidant helps epoxy underfill resist aerobic thermal degradation, reducing fillet cracks while preserving storage stability.

A TMAH-free polysilicon CMP slurry uses silica, amino acids or guanidine derivatives, and alkali salts to keep removal rate and oxide/nitride selectivity.

A ceria-based STI CMP slurry uses polyhydroxy compounds, polyacrylate, and PEG to cut oxide trench dishing while preserving oxide selectivity.