Porous Ce(OH)4 CMP Slurry for Higher Polishing Efficiency
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Solution Overview
Problem
The increasing generation of semiconductor devices requires a higher polishing amount in the chemical mechanical polishing (CMP) process, which is not efficiently addressed by existing slurry solutions.
Innovation Solution
A slurry solution is developed that includes an abrasive with a first frame portion made of oxide, having a spherical shape, and containing a plurality of pores filled with Ce(OH)4 abrasive elements, which increases the surface region of abrasive elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional slurry solutions are used in the CMP process, then the polishing process can be performed, but the polishing amount and productivity are insufficient for increasing semiconductor device generations
Solution Approach 1:
The abrasive particle comprises a porous structure with multiple pores formed inside a frame portion, allowing Ce(OH)4 abrasive elements to be filled within the pores. This porous structure significantly increases the surface region of abrasive elements compared to conventional solid abrasive particles, thereby enhancing the polishing amount and productivity for advanced semiconductor device generations.
2Productivity
If the surface region of abrasive elements is increased to improve productivity, then the polishing efficiency increases, but the complexity of abrasive structure fabrication increases
Solution Approach 1:
The invention employs a nested structure where Ce(OH)4 abrasive elements are filled inside the pores of a frame portion. This nesting approach allows the complex high-surface-area structure to be built from simpler components (frame portion and filler material), making the fabrication process more manageable while achieving the desired increase in abrasive surface region for improved polishing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the productivity of the CMP process, reduces its cost, and improves the polishing efficiency by increasing the surface area of abrasive elements in contact with the wafer surface.
Implementation Method 1
an abrasive including a first frame portion including an oxide and having a spherical shape, a plurality of pores in the abrasive, and a plurality of first abrasive elements at least partially filling the plurality of pores
Data Source
AI summary
A slurry solution includes an abrasive including a first frame portion including an oxide and having a spherical shape, a plurality of pores in the abrasive, and a plurality of first abrasive elements at least partially filling the plurality of pores, where the plurality of first abrasive elements include Ce(OH)4.