Molybdenum Wiring Stack With Oxide-Nitride Adhesion Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current electronic devices face issues with weak bonding strength between insulating layers and wiring layers, leading to peeling, which compromises protection and can damage the wiring layer.
Innovation Solution
An electronic device structure featuring a substrate with a first wiring layer containing at least 97 wt% molybdenum, an oxide insulating layer, and a nitride insulating layer, where the thickness difference between the oxide and nitride insulating layers is greater than or equal to 250 nm, enhancing bonding strength and preventing peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional insulating layer is applied over the wiring layer, then the wiring layer is protected, but the bonding strength between the insulating layer and wiring layer becomes weak causing peeling
Solution Approach 1:
The patent changes the thickness parameter of the insulating layers to resolve the bonding strength issue. Specifically, it sets the thickness of the first insulating layer to be greater than the thickness of the second insulating layer by 250 nm or more, which optimizes the bonding interface between the insulating layers and the wiring layer, preventing peeling while maintaining protection functionality
Solution Approach 2:
The patent uses a composite structure with multiple insulating layers (first insulating layer and second insulating layer) with different thicknesses. This composite approach allows each layer to contribute differently to the overall bonding strength and protection, with the thicker first layer providing stronger adhesion to the wiring layer containing molybdenum at 97 wt% or more
Data Source
AI summary
An electronic device includes a substrate, a first wiring layer, an oxide insulating layer and a nitride insulating layer. The first wiring layer is disposed on the substrate and includes an outer metal layer. The outer metal layer contains at least 97 wt % molybdenum. The oxide insulating layer is disposed on the first wiring layer and touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the thickness difference between the thickness of the oxide insulating layer and the thickness of the nitride insulating layer is greater than or equal to 250 nm.