Monolithic BAW Filter Assembly with Recessed Semiconductor Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of bulk acoustic wave (BAW) resonators into integrated circuits is challenging due to the need for specific piezoelectric materials and the requirement to leave the resonator's surface free for vibration, leading to assembly complications and compatibility issues with conventional semiconductor components.
Innovation Solution
A monolithic assembly of bulk acoustic wave filters and semiconductor components, featuring a substrate with a Bragg mirror, single-crystal semiconductor layers, and recesses under the resonators, with associated electrodes and vias for contact, allowing for efficient manufacturing and vibration preservation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resonator is placed on the upper side of a component with space created between the resonator and package, then the resonator can vibrate properly, but assembly problems occur
Solution Approach 1:
The patent merges the resonator assembly with the semiconductor component by forming the resonator directly on the semiconductor substrate within the same integrated structure. This eliminates the need for separate assembly steps and spacing accommodations, allowing the resonator to vibrate properly while simplifying the manufacturing process through integration.
Solution Approach 2:
The patent utilizes vertical layering within the substrate to accommodate both the resonator and semiconductor components in three-dimensional space. By stacking functional layers vertically, the design provides necessary vibration space for the resonator while maintaining a compact integrated footprint, eliminating assembly complexity associated with horizontal spacing.
2Reliability
If specific piezoelectric materials are used for resonators, then resonator function is achieved, but compatibility issues with conventional semiconductor components arise
Solution Approach 1:
The patent employs composite material structures where piezoelectric layers are integrated with semiconductor layers in a unified substrate. This composite approach allows the piezoelectric materials to perform resonator functions while the overall structure maintains compatibility with conventional semiconductor manufacturing processes and component integration.
Solution Approach 2:
The patent segments the integrated circuit into distinct functional layers, with piezoelectric materials confined to specific regions for resonator operation and semiconductor materials in other regions for electronic functions. This segmentation allows each material to perform its specialized function while maintaining overall system compatibility through structured integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the simple and efficient assembly of BAW filters within integrated circuits without complicating conventional semiconductor manufacturing, supporting high-frequency operations up to 10 GHz and beyond, while maintaining resonator vibration integrity.
Implementation Method 1
the resonators are arranged above an assembly of layers forming a Bragg mirror
Implementation Method 2
acoustic wave resonators require specific materials (piezoelectric materials)
Implementation Method 3
bulk acoustic wave resonator... if the resonator is desired to vibrate properly
Data Source
AI summary
A monolithic assembly of electronic components including a semiconductor substrate, at a first level above the substrate, at least one bulk acoustic wave resonator, at a second level above the resonator, a single-crystal semiconductor layer in which are formed semiconductor components, and recesses under the semiconductor layer portions arranged above the resonators.