Segmented mounting frames with heat dissipation plates reduce temperature differences between components, stabilizing oscillation frequency.
A lid member descending part covers the frame inner wall to increase contact surface area.
ZnO and SiO2 islands overcome electrical screening in doped gallium arsenide to generate strong surface acoustic waves.
An oriented ceramic supporting substrate enhances surface accuracy and bonding strength for composite substrates.
Adjusting capacitor pad dimensions via bridge formation to correct resonance frequency deviations and reduce quantum decoherence.
A SAW device package uses a spacer to create vertical clearance for surface acoustic wave propagation.
Segmented stubbed anchors decouple substrate stress and control quality factor by managing acoustic impedance in high-frequency MEMS resonators.
Piezoelectric antenna couples mechanical vibration into electrical radiation for efficient signal transmission.
Varying the sectional area of a via conductor in an RF module reduces wiring length and impedance mismatch while maintaining signal integrity.
Laser irradiation creates a modified region in the support substrate, reducing chipping and oblique break rates during piezoelectric substrate cutting.
A monolithic assembly integrates bulk acoustic wave resonators and semiconductor components on a shared substrate.
A BAW resonator package uses a groove and protrusion structure to align substrates for metallic bonding.
Curved peripheral edges reduce spurious vibrations and stress concentration in crystal vibrators.
Acoustic redistribution layers modify impedance profiles within piezoelectric stacks to boost parallel resistance and quality factor.
A lithium tantalate acoustic wave element uses a tungsten electrode to minimize thickness while maintaining shear horizontal wave propagation.
An alkali-niobium oxide thin film suppresses leak current while maintaining piezoelectric constants through precise rocking curve half-width control.
A piezoelectric chip uses a shared through hole to bond terminals and form vias within one intermediate member structure.
Inverting the metal profile angle reduces frequency sensitivity to manufacturing variations while maintaining high semi-resonance Q values.
Epitaxial deposition replaces sputtering to control film thickness in III-N transistor co-integration, improving signal integrity and bandwidth.
A piezoelectric resonator substrate uses an insulating material in the joining region to reduce level differences and prevent voids during cap sealing.
A piezoelectric single crystal device uses a substrate recess to eliminate stress concentrations that cause cracks and unstable vibration.
A segmented soft magnetic core structure enables automated coil winding and assembly for power circuit common mode filters.
MEMS piezoresistive resonators drive higher order eigenmodes with sense current routed through maximum displacement trenches, boosting signal gain.
A two-layer sealing method cures a thermosetting sheet to seal circuit members with varying gap sizes without entering hollow spaces.
Shape-memory metal coatings on resonator cores offset thermal drift, eliminating complex electronic corrections for COSC certification.
Segmenting the Faraday shield reduces common mode noise from both sides without increasing device volume or requiring bulky external filters.
A dual resonator MEMS structure integrates heating elements on a shared semiconductor body to stabilize frequency output.
Opposite polarity piezoelectric layers on continuous arms stabilize electrical coupling and simplify wiring by eliminating complex through-hole structures.